Light-emitting diode and light-emitting diode lamp
The present invention provides a light-emitting diode ( 10 ) including a substrate ( 101 ) made of a first conductive type silicon (Si) single crystal, a pn junction structured light-emitting section ( 40 ) composed of a III-group nitride semiconductor on the substrate, a first polarity ohmic electrode ( 107 a ) for the first conductive type semiconductor provided on the light-emitting section ( 40 ) and a second polarity ohmic electrode ( 108 ) for a second conductive type semiconductor on the same side as the light-emitting section ( 40 ) with respect to the substrate ( 101 ), wherein a second pn junction structure ( 30 ) is provided which is made up of a pn junction between the first conductive type semiconductor layer ( 102 ) and the second conductive type semiconductor layer ( 103 ) which is different from the pn junction structure of the light-emitting section ( 10 ).
1. A light-emitting diode comprising:
a first conductive type silicon single crystal substrate;
a light-emitting section including a first pn junction structure composed of a III-group nitride semiconductor on the silicon single crystal substrate;
a first polarity ohmic electrode for a first conductive type semiconductor provided on the light-emitting section; and
a second polarity ohmic electrode for a second conductive type semiconductor on the same side as the light-emitting section with respect to the silicon single crystal substrate,
wherein the second conductive type semiconductor layer comprises a boron phosphide (BP) base semiconductor and is directly joined to the silicon single crystal substrate, and the first conductive type silicon single crystal substrate and the second conductive type semiconductor layer form a second pn junction structure in a region which extends from the silicon single crystal substrate to the light-emitting section.
2. The light-emitting diode according to claim 1 , wherein the reverse break-down voltage of the pn junction structure in the second pn junction structure is higher than the forward voltage of the light-emitting diode comprising the light-emitting section including the first pn junction structure and lower than the reverse voltage of the light-emitting diode.
3. A light-emitting diode lamp configured by fixing the light-emitting diode according to claim 2 to a supporter, wherein the first conductive type silicon single crystal substrate and the first polarity ohmic electrode are electrically connected to substantially the same potential.
4. The light-emitting diode lamp according to claim 3 , wherein the region of the supporter electrically contacting the first conductive type silicon single crystal substrate is set to substantially the same potential as that of the first polarity ohmic electrode.
5. A light-emitting diode comprising:
a first conductive type silicon single crystal substrate;
a light-emitting section including a first pn junction structure composed of a III-group nitride semiconductor on the silicon single crystal substrate;
a first polarity ohmic electrode for a first conductive type semiconductor provided on the light-emitting section; and
a second polarity ohmic electrode for a second conductive type semiconductor on the same side as the light-emitting section with respect to the silicon single crystal substrate,
wherein a second conductive type intermediate layer is joined to the first conductive type silicon single crystal substrate, the second conductive type semiconductor layer is joined to the intermediate layer, and the first conductive type silicon single crystal substrate and the second conductive type intermediate layer form a second pn junction structure in a region which extends from the silicon single crystal substrate to the light-emitting section.
6. The light-emitting diode according to claim 5 , wherein the intermediate layer comprises silicon carbide (SiC) having a silicon-rich nonstoichiometric composition.
7. The light-emitting diode according to claim 5 , wherein the intermediate layer comprises a III-group nitride semiconductor.
8. The light-emitting diode according to claim 5 , wherein the second conductive type semiconductor layer comprises a second conductive type III-group nitride semiconductor material.
9. A light-emitting diode comprising:
a first conductive type silicon single crystal substrate;
a light-emitting section including a first pn junction structure composed of a III-group nitride semiconductor on the silicon single crystal substrate;
a first polarity ohmic electrode for a first conductive type semiconductor provided on the light-emitting section; and
a second polarity ohmic electrode for a second conductive type semiconductor on the same side as the light-emitting section with respect to the silicon single crystal substrate,
wherein a first conductive type intermediate layer is joined to the first conductive type silicon single crystal substrate, the second conductive type semiconductor layer is joined to the intermediate layer, and the first conductive type intermediate layer and the second conductive type semiconductor form a second pn junction structure in a region which extends from the silicon single crystal substrate to the light-emitting section.
10. The light-emitting diode according to claim 9 , wherein the intermediate layer comprises silicon carbide (SiC) having a silicon-rich nonstoichiometric composition.