Compound semiconductor device and method of manufacturing compound semiconductor device
The present invention provides a method of manufacturing a compound semiconductor device capable of improving yield when a wafer is divided into device regions. The method of manufacturing a compound semiconductor device includes a division step. The division step includes: a first division step of dividing a wafer 30 in a first direction α to obtain first strip wafers each having at least two rows of device portions 10 arranged in the first direction α; a second division step of dividing the first strip wafer in a second direction β to obtain second strip wafers each having a row of the device portions 10 arranged in the second direction β; and a third division step of dividing the second strip wafer into the device portions 10 , thereby forming compound semiconductor devices including the device portions 10.
1. A method of manufacturing a compound semiconductor device comprising:
a device forming step of forming a plurality of device portions on a main surface of a substrate in a matrix in a first direction and a second direction that is orthogonal to the first direction, thereby forming a wafer; and
a division step of dividing the wafer into the device portions, thereby forming the compound semiconductor devices,
wherein the division step includes:
a first division step of dividing the wafer in the first direction to obtain first strip wafers each having at least two rows of the device portions arranged in the first direction;
a second division step of dividing the first strip wafer in the second direction to obtain second strip wafers each having a row of the device portions arranged in the second direction;
a third division step of dividing the second strip wafer into the device portions, thereby forming the compound semiconductor devices including the device portions; and
a partition step of forming half cut grooves for separating the device portions in the main surface of the substrate in the first and second directions between the device forming step and the division step,
wherein, in the division step, a knife is pressed against the wafer along the half cut grooves such that cracks occur along the half cut grooves, thereby dividing the wafer into the first strip wafers or the second strip wafers.
2. The method of manufacturing the compound semiconductor device according to claim 1 ,
wherein the half cut grooves are formed by a laser method.
3. The method of manufacturing the compound semiconductor device according to claim 1 ,
wherein the first strip wafer includes two to five rows of the device portions arranged in the first direction.
4. The method of manufacturing the compound semiconductor device according to claim 1 ,
wherein the substrate is a sapphire substrate,
the main surface is a C-plane, and
the first direction is vertical to a (11-20) plane.
5. The method of manufacturing the compound semiconductor device according to claim 1 , further comprising:
a step of polishing a surface of the substrate opposite to the main surface such that the thickness of the substrate is in the range of 60 μm to 90 μm, before the division step.
6. The method of manufacturing the compound semiconductor device according to claim 1 ,
wherein the compound semiconductor device is a group-III nitride semiconductor light-emitting device.