Nitride semiconductor light emitting device and production method thereof
The present invention provides a nitride semiconductor light emitting device, which comprises positive and negative electrodes with high adhesion, can output high power, and does not generate heat; specifically, the present invention provides a nitride semiconductor light emitting device comprising at least an ohmic contact layer, a p-type nitride semiconductor layer, a nitride semiconductor light emitting layer, and an n-type nitride semiconductor layer, which are laminated on a plate layer, wherein a plate adhesion layer is formed between the ohmic contact layer and the plate layer, and the plate adhesion layer is made of an alloy comprising 50% by mass or greater of a same component as a main component of an alloy contained in the plate layer.
1. A nitride semiconductor light emitting device comprising at least an ohmic contact layer, a p-type nitride semiconductor layer, a nitride semiconductor light emitting layer, and an n-type nitride semiconductor layer, which are laminated on a plate layer,
wherein a plate adhesion layer is formed between the ohmic contact layer and the plate layer, and
the plate adhesion layer is made of an alloy comprising 50% by mass or greater of a same component as a main component of an alloy contained in the plate layer.
2. The nitride semiconductor light emitting device according to claim 1 , wherein a thickness of the plate layer is in a range from 10 μm to 200 μm.
3. The nitride semiconductor light emitting device according to claim 1 , wherein the plate layer is made of a NiP alloy.
4. The nitride semiconductor light emitting device according to claim 1 , wherein the plate layer is made of Cu or a Cu alloy.
5. The nitride semiconductor light emitting device according to claim 3 , wherein the plate adhesion layer is made of a NiP alloy.
6. The nitride semiconductor light emitting device according to claim 4 , wherein the plate adhesion layer is made of Cu or a Cu alloy.
7. The nitride semiconductor light emitting device according to claim 1 , wherein a thickness of the plate adhesion layer is in a range from 0.1 nm to 2 μm.
8. The nitride semiconductor light emitting device according to claim 1 , wherein the ohmic contact layer is made of at least one selected from the group consisting of Pt, Ru, Os, Rh, Ir, Pd, Ag, and alloys thereof.
9. The nitride semiconductor light emitting device according to claim 1 , wherein a thickness of the ohmic contact layer is in a range from 0.1 nm to 30 nm.
10. The nitride semiconductor light emitting device according to claim 1 , wherein a reflective layer is made of Ag, Al or an alloy thereof is formed on the ohmic contact layer.
11. A method for producing a nitride semiconductor light emitting device, said nitride semiconductor light emitting device comprising:
at least an ohmic contact layer, a p-type nitride semiconductor layer, a nitride semiconductor light emitting layer, and an n-type nitride semiconductor layer, which are laminated on a plate layer, wherein a plate adhesion layer is formed between the ohmic contact layer and the plate layer, and the plate adhesion layer is made of an alloy comprising 50% by mass or greater of a same component as a main component of an alloy contained in the plate layer, said method comprising:
laminating at least a buffer layer, an n-type nitride semiconductor layer, a nitride semiconductor light emitting layer, a p-type nitride semiconductor layer, an ohmic contact layer, a plate adhesion layer, and a plate layer on a substrate made of an oxide single crystal or a semiconductor single crystal in this order; after that, removing the substrate and the buffer layer; and then forming electrodes.
12. The method for producing a nitride semiconductor light emitting device according to claim 11 , wherein the plate adhesion layer is formed by a sputtering method.
13. The method for producing a nitride semiconductor light emitting device according to claim 11 , wherein the plate layer is formed by an electrolysis plating method.
14. The method for producing a nitride semiconductor light emitting device according to claim 11 , wherein the plate layer is formed by an electrolysis plating method.
15. The method for producing a nitride semiconductor light emitting device according to claim 11 , wherein after forming the plate layer, the obtained product is heated at a temperature in a range from 100° C. to 300° C.