Apparatus for producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor light-emitting device, group-III nitride semiconductor light-emitting device thereof, and lamp thereof

1. An apparatus for producing a group-III nitride semiconductor layer which forms a group-III nitride semiconductor layer on a substrate by a sputtering method, the apparatus comprising:

a first plasma-generating region where a target containing a group-III element is disposed and the target is sputtered to generate material particles formed of a material contained in the target; and

a second plasma-generating region where the substrate is disposed and nitrogen-containing plasma is generated,

wherein the first plasma-generating region and the second plasma-generating region are provided inside a chamber, and the first plasma-generating region and the second plasma-generating region are separated by a shielding wall which has an opening part from which the material particles are supplied onto the substrate.

2. The apparatus for producing a group-III nitride semiconductor layer according to claim 1 , wherein the target and the substrate are disposed facing one another through the opening part.

3. The apparatus for producing a group-III nitride semiconductor layer according to claim 1 , wherein the target contains at least one selected from the group consisting of Al, Ga and In.

4. A method of producing a group-III nitride semiconductor layer which forms a group-III nitride semiconductor layer on a substrate by a sputtering method using the apparatus for producing a group-III nitride semiconductor layer according to claim 1 , the method comprising:

a first plasma-generating step where material particles are produced in the first plasma-generating region; and

a second plasma-generating step where the nitrogen-containing plasma is supplied onto the substrate in the second plasma generating region,

wherein the first plasma-generating step and the second plasma-generating step are performed at the same time, and the material particles are supplied onto the substrate through the opening part.

5. The method of producing a group-III nitride semiconductor layer according to claim 4 , wherein the material particles are supplied from the target, which is disposed facing the substrate through the opening part, onto the substrate.

6. The method of producing a group-III nitride semiconductor layer according to claim 4 , wherein the target contains at least one selected from the group consisting of Al, Ga and In.

7. A method of producing a group-III nitride semiconductor light-emitting device wherein the group-III nitride semiconductor light-emitting device includes a semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer that are formed of a group-III nitride semiconductor are laminated over a substrate, the method comprising: forming at least one portion of the semiconductor layer by the method of producing a group-III nitride semiconductor layer according to claim 4 .

8. A method of producing a group-III nitride semiconductor light-emitting device wherein the group-III nitride semiconductor light-emitting device includes a semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer that are formed of a group-III nitride semiconductor are laminated over a substrate; and a buffer layer formed of a group-III nitride semiconductor between the substrate and the n-type semiconductor layer, the method comprising: forming the buffer layer by the method of producing a group-III nitride semiconductor layer according to claim 4 .

9. A group-III nitride semiconductor light-emitting device which is obtained by the method of producing a group-III nitride semiconductor light-emitting device according to claim 7 .

10. A lamp including the group-III nitride semiconductor light-emitting device according to claim 9 .

11. A group-III nitride semiconductor light-emitting device which is obtained by the method of producing a group-III nitride semiconductor light-emitting device according to claim 8 .