Method for manufacturing group III nitride compound semiconductor light-emitting device, group III nitride compound semiconductor light-emitting device, and lamp
A method for manufacturing a Group III nitride semiconductor light-emitting device according to the present invention, comprising forming, on a substrate, a semiconductor layer comprised of a Group III nitride compound semiconductor containing Ga as a Group III element by a sputtering method, wherein during the formation of the semiconductor layer, sputtering is performed under the condition where at least the surface layer of a sputtering target comprised of Ga is liquefied.
1. A method for manufacturing a Group III nitride compound semiconductor light-emitting device, comprising
forming, on a substrate, a semiconductor layer comprised of a Group III nitride compound semiconductor containing Ga as a Group III element by a sputtering method; and
forming, by the sputtering method, a buffer layer comprised of a columnar crystal between the substrate and the semiconductor layer, wherein
during the formation of the semiconductor layer, sputtering is performed under the condition where at least the surface layer of a sputtering target comprised of Ga is liquefied, and
the width of a grain of the columnar crystal constituting the buffer layer is within a range of 0.1 to 100 nm.
2. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 1 , wherein the sputtering target is liquefied by a power applied to the sputtering target.
3. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 2 , wherein the power applied to the sputtering target is set to 0.02 W/cm 2 or more.
4. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 1 , wherein the sputtering target is liquefied by heating.
5. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 1 , wherein during the formation of the semiconductor layer, a power is applied to the sputtering target by a high-frequency method or a pulsed DC method.
6. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 1 , wherein during the formation of the semiconductor layer, a magnetic field is rotated or swung for the sputtering target.
7. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 1 , wherein the semiconductor layer is formed by a reactive sputtering method in which a nitride material is circulated in a reactor.
8. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 7 , wherein nitrogen is used as the nitride material.
9. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 1 , wherein the buffer layer is formed of a Group III nitride compound containing Al as a Group III element.
10. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 9 , wherein the buffer layer is formed of AIN.
11. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 1 , wherein the buffer layer is formed so as to cover 90% or more of the surface of the substrate.
12. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 1 , wherein the thickness of the buffer layer is within a range of 10 to 500 nm.
13. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 1 , wherein the buffer layer is formed of AIN, and the semiconductor layer comprised of the Group III nitride compound is formed of GaN.
14. The method for manufacturing a Group III nitride compound semiconductor light-emitting device according to claim 1 , wherein sapphire is used for the substrate.