Nitride semiconductor light-emitting device and production method thereof
Disclosed is a semiconductor device which is improved in output power efficiency since reflection by the substrate is reduced. This semiconductor device is also excellent in strength characteristics of a supporting substrate. Also disclosed is a method for producing such a semiconductor device. Specifically disclosed is a nitride semiconductor device wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order on a substrate. This nitride semiconductor device is characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer. Also disclosed is a nitride semiconductor device having a structure wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order, the device characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer and a light-transmitting material layer is formed on the p-type semiconductor layer in a region where the metal film layer and the plated metal plate are not formed.
1. A nitride semiconductor light-emitting device, comprising:
an n-type semiconductor layer,
a light-emitting layer,
a p-type semiconductor layer,
a metal film layer, and
a plated metal plate,
which are stacked on a substrate,
wherein the metal film layer and the plated metal plate are formed partially on the p-type semiconductor layer, and
the metal film layer and the plated metal plate are formed in a cross shape from the top view on the p-type semiconductor layer.
2. A nitride semiconductor light-emitting device according to claim 1 , wherein the ratio of an area of the metal film layer and the plated metal plate formed on the p-type semiconductor layer to an area of a top surface of the p-type semiconductor is in a range of 10 to 90%.
3. A nitride semiconductor light-emitting device according to claim 1 , wherein the device is formed by dicing.
4. A nitride semiconductor light-emitting device according to claim 1 , further comprising a transparent electrode on the p-type semiconductor layer.
5. A nitride semiconductor light-emitting device according to claim 1 , further comprising an ohmic contact layer.
6. A nitride semiconductor light-emitting device according to claim 5 , wherein the ohmic contact layer is composed of a simple substance metal and/or an alloy of Pt, Ru, Os, Rh, Ir, Pd, Ag.
7. A nitride semiconductor light-emitting device according to claim 5 , wherein the ohmic contact layer has a thickness in a range of 0.1 nm to 30 nm.
8. A nitride semiconductor light-emitting device according to claim 1 , wherein the plated metal plate has a thickness in a range of 10 μm to 200 μm.
9. A nitride semiconductor light-emitting device according to claim 1 , wherein the plated metal plate is composed of a NiP alloy, Cu or an alloy of Cu.
10. A nitride semiconductor light-emitting device according to claim 1 , further comprising a plating adhesion layer formed between the metal film layer and the plated metal plate.
11. A nitride semiconductor light-emitting device according to claim 10 , wherein the plating adhesion layer comprises a component at 50% by weight or more, which is the same as the main plating component which is contained at 50% by weight or more in the plated metal layer.
12. A nitride semiconductor light-emitting device according to claim 10 , wherein the plating adhesion layer is composed of a NiP alloy or a Cu alloy.
13. A nitride semiconductor light-emitting device according to claim 1 , further comprising a light-permeable material layer formed on the p-type semiconductor layer in a region where the metal film layer and the plated metal plate are not formed.
14. A nitride semiconductor light-emitting device according to claim 13 , wherein the light-permeable material layer is formed on the p-type semiconductor layer, and the light-permeable material layer is surrounded at least partially by the metal film layer and the plated metal plate.
15. A nitride semiconductor light-emitting device according to claim 13 , wherein the light-permeable material layer is formed on the p-type semiconductor layer through an intermediary of a transparent electrode, and the light-permeable material layer is surrounded at least partially by the metal film layer and the plated metal plate.
16. A nitride semiconductor light-emitting device according to claim 13 , wherein the light-permeable material layer is made from a light-permeable resin, a silica-based material or a titania-based material.
17. A nitride semiconductor light-emitting device according to claim 13 , wherein a refractive index of the light-permeable material layer is in a range of 1.4 to 2.6.
18. A nitride semiconductor light-emitting device according to claim 13 , wherein a thickness of the light-permeable material layer is in a range of 10 to 200 μm.
19. A nitride semiconductor light-emitting device according to claim 13 , further comprising an ohmic contact layer.
20. A nitride semiconductor light-emitting device according to claim 19 , wherein the ohmic contact layer is composed of a simple substance metal and/or an alloy of Pt, Ru, Os, Rh, Ir, Pd, Ag.
21. A nitride semiconductor light-emitting device according to claim 19 , wherein the ohmic contact layer has a thickness in a range of 0.1 nm to 30 nm.
22. A nitride semiconductor light-emitting device as claimed in claim 13 , wherein the plated metal plate has a thickness in a range of 10 μm to 200 μm.
23. A nitride semiconductor light-emitting device according to claim 13 , wherein the plated metal plate is composed of a NiP alloy, Cu or an alloy of Cu.
24. A nitride semiconductor light-emitting device according to claim 13 , further comprising a plating adhesion layer formed between the metal film layer and the plated metal plate.
25. A nitride semiconductor light-emitting device according to claim 24 , wherein the plating adhesion layer comprises a component at 50% by weight or more, which is the same as the main plating component which is contained at 50% by weight or more in the plated metal plate.
26. A nitride semiconductor light-emitting device according to claim 24 , wherein the plating adhesion layer is composed of a NiP alloy or a Cu alloy.
27. A method of producing a nitride semiconductor light-emitting device, said device comprising:
an n-type semiconductor layer,
a light-emitting layer,
a p-type semiconductor layer,
a metal film layer, and
a plated metal plate,
which are stacked on a substrate,
said method comprising:
forming stacked layers by stacking at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer, a plated metal plate on a substrate,
wherein the metal film layer and the plated metal plate are formed partially on the p-type semiconductor layer, and
the metal film layer and the plated metal plate are formed in a cross shape from the top view on the p-type semiconductor layer.
28. The method of producing a nitride semiconductor light-emitting device according to claim 27 ,
wherein the n-type semiconductor layer is formed on a substrate through the intermediary of a buffer layer, and when the process of forming stacked layers is performed, the n-type semiconductor layer is exposed by removing the substrate and the buffer layer.
29. The method of producing a nitride semiconductor light-emitting device according to claim 28 , wherein the substrate is removed by using a laser.
30. The method of producing a nitride semiconductor light-emitting device according to claim 27 , further comprising a heat-treating process in a temperature range from 100° C. to 300° C. after forming the plated metal plate.
31. The method of producing a nitride semiconductor light-emitting device according to claim 27 , further comprising:
forming a light-permeable material layer on the p-type semiconductor layer in a region where the metal film layer and the plated metal plate are not formed.
32. The method of producing a nitride semiconductor light-emitting device according to claim 31 , wherein the n-type semiconductor layer is formed on a substrate through the intermediary of a buffer layer, and when the process of forming stacked layers is performed, the n-type semiconductor layer is exposed by removing the substrate and the buffer layer.
33. The method of producing a nitride semiconductor light-emitting device according to claim 32 , wherein the substrate is removed by using a laser.
34. The method of producing a nitride semiconductor light-emitting device according to claim 31 , further comprising a heat-treating process in a temperature range from 100° C. to 300° C. after forming the plated metal plate.