Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure
A gallium-nitride-based semiconductor stacked structure includes a low-temperature-deposited buffer layer and an active layer. The low-temperature-deposited buffer layer is composed of a Group III nitride material that has been grown at low temperature and includes a single-crystal layer in an as-grown state, the single-crystal layer being present in the vicinity of a junction area that is in contact with a (0001) (c) plane of a sapphire substrate. The active layer is composed of a gallium-nitride (GaN)-based semiconductor layer that is provided on the low-temperature-deposited buffer layer. The single-crystal layer is composed of a hexagonal Al X Ga Y N (0.5<X≦1, X+Y=1) crystal that contains aluminum in a predominant amount with respect to gallium such that a [2.−1.−1.0.] direction of the Al X Ga Y N crystal orients along with a [2.−1.−1.0.] direction of the (0001) bottom plane of the sapphire substrate.
1. A gallium-nitride-based semiconductor stacked structure comprising:
a low-temperature-deposited buffer layer composed of a Group III nitride material that has been grown at low temperature and that includes a single-crystal layer in as-grown state, the single-crystal layer being present in the vicinity of a junction area that is in contact with a (0001) (c) plane of a sapphire substrate;
an active layer composed of a gallium-nitride (GaN)-based semiconductor layer that is provided on the low-temperature-deposited buffer layer; and
a thin-film layer provided between the low-temperature-deposited buffer layer and the active layer and composed of a GaN-based Group III nitride semiconductor containing indium or aluminum having a layer thickness of 2 nm to 100 nm;
wherein the single-crystal layer included in the low-temperature-deposited buffer layer in as-grown state is composed of a hexagonal Al x Ga y N (0.5<X≦1, X+Y=1)crystal that contains aluminum in a predominant amount with respect to gallium such that a [2.−1.−1.0.] direction of the Al x Ga y N crystal orients along with a [2.−1.−1.0.] direction of the (0001) bottom plane of the sapphire substrate.
2. The gallium-nitride-based semiconductor stacked structure according to claim 1 , further comprising a superlattice structure provided between the low-temperature-deposited buffer layer and the active layer and having a thin-film layer composed of a GaN-based Group III nitride semiconductor containing indium or aluminum.
3. The gallium-nitride-based semiconductor stacked structure according to claim 2 , wherein the thin-film layer composed of a GaN-based Group III nitride semiconductor containing indium or aluminum or the superlattice structure layer having the thin-film layer is provided between the active layer and an aluminum gallium indium nitride (Al α Ga β In 1−α−β N: 0≦α, β≦1, 0≦α+β≦1) layer provided on the low-temperature-deposited buffer layer.
4. The gallium-nitride-based semiconductor stacked structure according to claim 1 , wherein the orientation of the thin-film layer composed of a GaN-based Group III nitride semiconductor containing indium or aluminum coincides with that of the single-crystal layer included in the low-temperature-deposited buffer layer.
5. The gallium-nitride-based semiconductor stacked structure according to claim 2 , wherein the superlattice structure is fabricated by stacking, alternately and repeatedly, Ga Y1 In Z1 N (0<Z1≦1, Y1+Z1=1) thin film layers and Ga Y2 In Z2 N (0<Z2≦1, Z1 ≠Z2, Y2+Z2=1) thin film layers.