Method for producing group III nitride semiconductor light-emitting device

1. A method for producing a group III nitride semiconductor light-emitting device comprising: an intermediate layer formation step in which an intermediate layer containing group III nitride is formed on a substrate by sputtering, and a laminate semiconductor formation step in which an n-type semiconductor layer having a base layer, a light-emitting layer, and a p-type semiconductor layer are laminated on the intermediate layer in this order,

wherein the method includes a pretreatment step in which the intermediate layer is treated using plasma between the intermediate layer formation step and the laminate semiconductor formation step, and a formation step for the base layer which is included in the laminate semiconductor formation step is a step for laminating the base layer by sputtering, and

wherein the intermediate layer formation step is carried out in a first chamber, the formation step for the base layer is carried out in a second chamber, and the substrate on which the intermediate layer is formed is taken out from the first chamber between the intermediate layer formation step and the pretreatment step.

2. The method for producing a group III nitride semiconductor light-emitting device according to claim 1 , wherein the pretreatment step is carried out by flowing a pretreatment gas containing at least one selected from the group consisting of nitrogen, argon, and a mixture gas of nitrogen and argon on the surface of the intermediate layer.

3. The method for producing a group III nitride semiconductor light-emitting device according to claim 1 , wherein the pretreatment step is carried out by flowing a pretreatment gas containing nitrogen on the surface of the intermediate layer.

4. The method for producing a group III nitride semiconductor light-emitting device according to claim 2 , wherein the partial pressure of nitrogen in the pretreatment gas is in a range of from 1×10 −2 Pa to 10 Pa.

5. The method for producing a group III nitride semiconductor light-emitting device according to claim 2 , wherein the pressure of the pretreatment gas during the pretreatment step is in a range of from 0.01 Pa to 5 Pa.

6. The method for producing a group III nitride semiconductor light-emitting device according to claim 1 , wherein the partial pressure of oxygen remaining in the second chamber is 2.0×10 −6 Pa or less.

7. The method for producing a group III nitride semiconductor light-emitting device according to claim 2 , wherein the time for the pretreatment is in a range of from 30 seconds to 7,200 seconds.

8. The method for producing a group III nitride semiconductor light-emitting device according to claim 2 , wherein the time for the pretreatment is in a range of from 60 seconds to 1,800 seconds.

9. The method for producing a group III nitride semiconductor light-emitting device according to claim 2 , wherein the temperature of the substrate in the pretreatment step is in a range of from 25° C to 1,000° C.

10. The method for producing a group III nitride semiconductor light-emitting device according to claim 2 , wherein the temperature of the substrate in the pretreatment step is in a range of from 400° C to 900° C.

11. The method for producing a group III nitride semiconductor light-emitting device according to claim 1 , wherein the plasma treatment in the pretreatment step is reverse sputtering.

12. The method for producing a group III nitride semiconductor light-emitting device according to claim 11 , wherein the pretreatment step is a step in which reverse sputtering is carried out by generating plasma using an electrical power supply having high frequency.

13. The method for producing a group III nitride semiconductor light-emitting device according to claim 11 , wherein the pretreatment step is a step in which reverse sputtering is carried out by generating nitrogen plasma using an electrical power supply having high frequency.

14. The method for producing a group III nitride semiconductor light-emitting device according to claim 11 , wherein a bias in a range of from 1 to 200 W is applied to one substrate having a diameter of 50 mm in the pretreatment step.

15. The method for producing a group III nitride semiconductor light-emitting device according to claim 1 , wherein the intermediate layer includes columnar crystals.

16. The method for producing a group III nitride semiconductor light-emitting device according to claim 1 , wherein the intermediate layer is formed so as to cover at least 90% of the surface of the substrate.

17. The method for producing a group III nitride semiconductor light-emitting device according to claim 15 , wherein an average grain width of the columnar crystals in the intermediate layer is in a range of from 1 nm to 100 nm.

18. The method for producing a group III nitride semiconductor light-emitting device according to claim 15 , wherein an average grain width of the columnar crystals in the intermediate layer is in a range of from 1 nm to 70 nm.

19. The method for producing a group III nitride semiconductor light-emitting device according to claim 1 , wherein the thickness of the intermediate layer is in a range of from 10 nm to 500 nm.

20. The method for producing a group III nitride semiconductor light-emitting device according to claim 1 , wherein the thickness of the intermediate layer is in a range of from 20 nm to 100 nm.

21. The method for producing a group III nitride semiconductor light-emitting device according to claim 1 , wherein the intermediate layer contains Al.

22. The method for producing a group III nitride semiconductor light-emitting device according to claim 21 , wherein the intermediate layer is made of AlN.

23. The method for producing a group III nitride semiconductor light-emitting device according to claim 1 , wherein the base layer is made of GaN-based semiconductor.

24. The method for producing a group III nitride semiconductor light-emitting device according to claim 23 , wherein the base layer is made of AlGaN.