Manufacturing method of group III nitride semiconductor light-emitting device
The present invention provides a manufacturing method of a group III nitride semiconductor light-emitting device, including a lamination step of forming a plurality of lamination films including a group III nitride semiconductor on a substrate, in which a substrate on which is formed a foundation layer including a monocrystalline group III nitride semiconductor is used as the substrate, and lamination films are formed on the foundation layer by a sputtering method, with the substrate including the foundation layer and a target made from a group III metal or an alloy including a group III metal being placed in a sputtering chamber.
1. A manufacturing method of a group III nitride semiconductor light-emitting device, comprising
a lamination step of forming a plurality of lamination films including a group III nitride semiconductor on a substrate, wherein
a substrate on which is formed a foundation layer including a monocrystalline group III nitride semiconductor is used as the substrate,
the substrate including the foundation layer and a target made from a group III metal or an alloy including a group III metal is placed in a sputtering chamber, and
the lamination films are formed on the foundation layer by a sputtering method.
2. The manufacturing method of a group III nitride semiconductor light-emitting device according to claim 1 , wherein
the foundation layer has a thickness of 1 μm or more.
3. The manufacturing method of a group III nitride semiconductor light-emitting device according to claim 1 , wherein
in the foundation layer, a full width at half maximum of an X-ray rocking curve measurement is 300 arcsec or less in a (10-10) plane orientation.
4. The manufacturing method of a group III nitride semiconductor light-emitting device according to claim 1 , wherein the foundation layer is formed by a metal organic chemical vapor deposition method.
5. The manufacturing method of a group III nitride semiconductor light-emitting device according to claim 1 , wherein
a substrate temperature is 600° C. to 1200° C.
6. The manufacturing method of a group III nitride semiconductor light-emitting device according to claim 1 , wherein
a substrate temperature is 800° C. to 1000° C.
7. The manufacturing method of a group III nitride semiconductor light-emitting device according to claim 1 , wherein
the lamination films are formed by a sputtering method under a gas atmosphere composed of a gas including nitrogen atoms with a flow ratio of 20% to 80% and the balance of a gas including inert atoms.
8. The manufacturing method of a group III nitride semiconductor light-emitting device according to claim 7 , wherein
the gas atmosphere is composed of a gas including nitrogen atoms which is made from a nitrogen gas and a gas including inert atoms which is made from argon gas.
9. The manufacturing method of a group III nitride semiconductor light-emitting device according to claim 7 , wherein
the gas including nitrogen atoms has a flow ratio of 50% or less.
10. The manufacturing method of a group III nitride semiconductor light-emitting device according to claim 1 , wherein
when the lamination film is formed by a sputtering method, Mg and Zn are added as p-type dopants.
11. The manufacturing method of a group III nitride semiconductor light-emitting device according to claim 1 , wherein
when the lamination film is formed by a sputtering method, Si, Ge, and Sn are added as n-type dopants.
12. The manufacturing method of a group III nitride semiconductor light-emitting device according to claim 10 , wherein
the lamination film to which are added the p-type dopants and/or the n-type dopants is used as a contact layer for forming an electrode.