IP Library Granted Patent US 7,482,871
Granted Patent B2
US 7,482,871 · App. 11/598,770 · Granted Jan 27, 2009

CMOS amplifier of filter for ultra wideband application and method of the same

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,482,871
App. No.
11/598,770
Granted
Jan 27, 2009
Kind
B2
Abstract

A CMOS amplifier of a filter for an ultra wideband application and a method of the same are provided. In the CMOS amplifier, an active load circuit adds a Zero location and increases a gain by MOSFETs, feeding back operation, and has a property of a high gain and a wide bandwidth. When the CMOS amplifier is applied to a biquad LPF, a high voltage linearity over about 200 mV peak-to-peak and an suitable ultra wideband property over about 320 MHz of an cutoff frequency may be achieved.

Claims (66)

1. An amplifier comprising:

an active load circuit which adds a Zero location and increases a gain by using metal-oxide semiconductor field effect transistors (MOSFETs) feeding back between a first power source and a second power source;

a current control circuit which receives a common bias and is connected to the active load circuit;

a signal input circuit which receives differential input signals and is connected to the current control circuit; and

a current source connected between the second power source and the signal input circuit,

wherein the amplifier receives and amplifies the differential input signals, and outputs the amplified differential signals via two contact points between two MOSFETs of the current control circuit and the active load circuit, and

wherein the active load circuit comprises:

a second current source connected between a common contact point and the first power source;

a first active feedback circuit connected between two terminals of the second current source and the second power source; and

a second active feedback circuit connected between two terminals of the second current source and the second power source and provided with devices symmetrical to the first active feedback circuit.

2. The amplifier of claim 1 , wherein each of the active feedback circuits comprises:

a capacitor in which a terminal of the capacitor is connected to the first power source;

a first MOSFET in which one terminal among a first source and a first drain is connected to the first power source, a first gate is connected to another terminal of the capacitor, and a first remaining terminal among the first source and the first drain is connected to a contact point of the current control circuit;

a first resistor connected between a common contact point and the gate of the first MOSFET;

a second MOSFET in which one terminal among a second source and a second drain is connected to the first power source, a second gate is connected to the contact point of the current control circuit, and a second remaining terminal among the second source and the second drain is connected to a first node;

a third current source connected between the first node and the second power source; and

a second resistor connected between the first node and the first gate of the first MOSFET.

3. The amplifier of claim 2 , wherein the first MOSFET is a P-channel transistor and the second MOSFET is an N-channel transistor.

4. The amplifier of claim 2 , wherein the first resistor and the second resistor have different resistance values from each other.

5. The amplifier of claim 2 , wherein the current sources comprises a transistor making a current flow between two terminals according to a corresponding bias.

6. The amplifier of claim 1 , further comprising:

an output buffer connected to the two contact points between the current control circuit and the load circuit.

7. An amplifier comprising:

an active load circuit which adds a Zero location and increases a gain by using metal-oxide semiconductor field effect transistors (MOSFETs) feeding back between a first power source and a second power source;

a current control circuit which receives a common bias and is connected to the active load circuit;

a signal input circuit which receives differential input signals and is connected to the current control circuit;

a current source connected between the second power source and the signal input circuit; and

an output buffer connected to the two contact points between the current control circuit and the load circuit,

wherein the amplifier receives and amplifies the differential input signals, and outputs the amplified differential signals via two contact points between two MOSFETs of the current control circuit and the active load circuit,

wherein the output buffer comprises:

a first MOSFET in which one first terminal among a first source and a first drain is connected to the first power source, a first gate is connected to a first contact point between the load circuit and the current control circuit, and a first remaining terminal among the first source and the first drain is connected to a first output terminal;

a first current source connected between the first output terminal and the second power source;

a second MOSFET in which one second terminal among a second source and a second drain is connected to the first power source, a second gate is connected to a second contact point between the load circuit and the current control circuit, and a second remaining terminal among the second source and the second drain is connected to a second output terminal; and

a second current source connected between the second output terminal and the second power source.

8. An amplifier comprising:

an active load circuit which adds a Zero location and increases a gain by using metal-oxide semiconductor field effect transistors (MOSFETs) feeding back between a first power source and a second power source;

a current control circuit which receives a common bias and is connected to the active load circuit;

a signal input circuit which receives differential input signals and is connected to the current control circuit;

a current source connected between the second power source and the signal input circuit; and

an output buffer connected to the two contact points between the current control circuit and the load circuit,

wherein the amplifier receives and amplifies the differential input signals, and outputs the amplified differential signals via two contact points between two MOSFETs of the current control circuit and the active load circuit, and

wherein the amplifier and another amplifier performing the same operations as the amplifier are coupled with passive devices to be applicable to a low pass filter (LPF).

9. The amplifier of claim 8 , wherein the LPF is used for an ultra wideband (UWB) system.

10. The amplifier of claim 9 , wherein the UWB system processes a multiband signal of a Multi-Band-Orthogonal Frequency Division Multiplex (MB-OFDM) scheme.

11. A method of amplifying signals, the method comprising:

operating a current source connected to MOSFETs receiving differential input signals;

controlling, with two MOSFETs which receive a common bias, a current flowing between an active load circuit and the MOSFETs receiving the differential input signals; and

amplifying the received differential input signals and outputting the amplified differential signals via two contact points between the two MOSFETs which receive the common bias and the active load circuit,

wherein the active load circuit comprises:

a second current source connected between a common contact point and the first power source;

a first active feedback circuit connected between two terminals of the second current source and the second power source; and

a second active feedback circuit connected between two terminals of the second current source and the second power source and provided with devices symmetrical to the first active feedback circuit, and

wherein a wideband signal is processed by using an added Zero location and an increased gain via the active load circuit using MOSFETs feeding back between the first power source and the second power source.

12. The method of claim 11 , further comprising buffering the amplified differential signals.

13. The method of claim 11 , wherein an LPF is implemented by using the amplification method with passive devices.

14. The method of claim 13 , wherein the LPF is used for a UWB system.

15. The method of claim 14 , wherein the UWB system processes a multiband signal of MB-OFDM scheme.

16. A computer readable recording medium having embodied thereon a computer program executing a method of amplifying signals, the method comprising:

operating a current source connected to MOSFETs receiving differential input signals;

controlling, with two MOSFETs which receive a common bias, a current flowing between an active load circuit and the MOSFETs receiving the differential input signals; and

amplifying the received differential input signals and outputting amplified differential signals via two contact points between the two MOSFETs which receive the common bias and the active load circuit,

wherein the active load circuit comprises:

a second current source connected between a common contact point and the first power source;

a first active feedback circuit connected between two terminals of the second current source and the second power source; and

a second active feedback circuit connected between two terminals of the second current source and the second power source and provided with devices symmetrical to the first active feedback circuit, and

wherein a wideband signal is processed by using an added Zero location and an increased gain via the active load circuit using MOSFETs feeding back between the first power source and the second power source.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 14, 2006
From: LEE, JUNG EUN; KIM, HOON TAE; KOH, JEONG WOOK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 018609/0282 →
Priority Claims (1)
KR 10-2006-0002171 · Jan 9, 2006 · national
Continuity (1)
Related Publication 20070159247A1 · Jul 12, 2007