Semiconductor device and method of manufacturing the same
The semiconductor device which can apply the stress application technology to a channel part by a liner film to MISFET including a full silicidation gate electrode, and its manufacturing method are realized. The first liner silicon nitride film is formed on the semiconductor substrate MISFET formed. Insulating films, such as a silicon oxide film, are formed on the first liner silicon nitride film so that it may fully fill up the side of a gate electrode. Next, flattening processing is performed to an insulating film and the first liner silicon nitride film, and a polysilicon gate electrode is exposed. An insulating film is removed leaving the first liner silicon nitride film. The full silicidation of the exposed gate electrode is done, and the second liner silicon nitride film that covers the first liner silicon nitride film and the exposed full silicidation gate electrode is formed.
1 . A method of manufacturing a semiconductor device, comprising the steps of
(a) forming in a semiconductor substrate at least one MISFET (Metal Insulator Semiconductor Field Effect Transistor) which has a silicon gate electrode, a source region, and a drain region;
(b) forming a first silicon nitride which covers at least the silicon gate electrode, the source region, and the drain region film over the semiconductor substrate;
(c) forming an insulating film over the first silicon nitride film so that the insulating film may fill up a side of the silicon gate electrode;
(d) performing flattening processing to the insulating film and the first silicon nitride film, and exposing the silicon gate electrode;
(e) removing the insulating film leaving the first silicon nitride film;
(f) siliciding the exposed silicon gate electrode; and
(g) forming a second silicon nitride film which covers at least the first silicon nitride film, and the exposed silicon gate electrode to which silicidation is finished.
2 . A method of manufacturing a semiconductor device according to claim 1 , wherein
first MISFET of a first conductivity type; and second MISFET of a second conductivity type different from the first conductivity type are included in the at least one MISFET; and
the step (a) through (g) are performed to both sides of the first and the second MISFET; further comprising the steps of:
(h) removing the second silicon nitride film near the second MISFET leaving the second silicon nitride film near the first MISFET after the step (g); and
(i) forming a third silicon nitride film which covers the first silicon nitride film over the second MISFET, and the silicon gate electrode of the second MISFET.
3 . A semiconductor device, comprising:
a semiconductor substrate;
a first MISFET (Metal Insulator Semiconductor Field Effect Transistor) which was formed in the semiconductor substrate and which has a silicidation silicon gate electrode, a source region, and a drain region; and
a silicon nitride film which covers the source region, the drain region, and a top part of the silicon gate electrode at least;
wherein a thickness of the silicon nitride film over the source region and the drain region is larger than a thickness of the silicon nitride film over the top part of the silicon gate electrode.
4 . A semiconductor device according to claim 3 , wherein
the silicon nitride film comprises:
a first silicon nitride film which covers the source region and the drain region at least, and does not cover a top part of the silicon gate electrode; and
a second silicon nitride film which covers the first silicon nitride film, and the top part of the silicon gate electrode at least.
5 . A semiconductor device according to claim 4 , further comprising:
a second MISFET of a different conductivity type from the first MISFET which was formed in the semiconductor substrate and which has a silicidation silicon gate electrode, a source region, and a drain region;
a third silicon nitride film which covers the source region and the drain region of the second MISFET at least, and does not cover a top part of the silicon gate electrode of the second MISFET; and
a fourth silicon nitride film which covers the third silicon nitride film, and the top part of the silicon gate electrode of the second MISFET at least;
wherein one side of the second and the fourth silicon nitride films is a compressive liner film, and another side is a tensile liner film.