Ion sources, systems and methods
Ion sources, systems and methods are disclosed.
1. A method, comprising:
exposing a sample to a focused ion beam;
generating a second ion beam by interacting a gas with a gas field ion source; and
exposing the sample to the second ion beam wherein the second ion beam is used to determine information that is used to select a location of the focused ion beam at the sample.
2. The method of claim 1 , wherein the focused ion beam comprises gallium ions.
3. The method of claim 1 , further comprising cutting the sample with the focused ion beam.
4. The method of claim 1 , wherein the second ion beam is used to image the sample.
5. The method of claim 4 , wherein the second ion beam is used to image the sample after the focused ion beam cuts the sample.
6. The method of claim 1 , wherein the sample is a semiconductor article.
7. The method of claim 6 , wherein the article includes a circuit, and the method includes repairing the circuit.
8. The method of claim 6 , wherein the article includes a mask, and the method includes repairing the mask.
9. The method of claim 1 , wherein the focused ion beam and the second ion beam are used simultaneously.
10. The method of claim 1 , wherein the focused ion beam and the second ion beam are used at different times.