IP Library Granted Patent US 8,114,304
Granted Patent B2
US 8,114,304 · App. 11/603,388 · Granted Feb 14, 2012

Method for producing electronic components

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,114,304
App. No.
11/603,388
Granted
Feb 14, 2012
Kind
B2
Abstract

In order to achieve an integration of functional structures into the housing of electronic components, provision is made of a method for producing an electronic component comprising at least one semiconductor element having at least one sensor-technologically active and/or emitting device on at least one side, the method comprising the following steps: provision of at least one die on a wafer, production of at least one patterned support having at least one structure which is functional for the sensor-technologically active and/or emitting device, joining together of the wafer with the at least one support, so that that side of the die which has the sensor-technologically active and/or emitting device faces the support, separation of the die.

Claims (13)

1. A multilayer patterned wafer composite, comprising:

a first non transparent semiconductor wafer having a top and a bottom surface;

a sensor-technologically active device and/or an emitting device located on the top surface of the first wafer;

a layer having at least one optical element; and

a second non transparent semiconductor wafer having a cavity extending between a second wafer top surface and a second wafer bottom surface, the second semiconductor wafer acting as a spacer between said at least one optical element and said first semiconductor wafer;

wherein said cavity is filed with a material selected from a group consisting of a gas, a fluid, and a low-k material.

2. A multilayer patterned wafer composite, comprising:

a first non transparent semiconductor wafer having a top and a bottom surface;

a sensor-technologically active device and/or an emitting device located on the top surface of the first wafer;

a layer having at least one optical element; and

a second non transparent semiconductor wafer having a cavity extending between a second wafer top surface and a second wafer bottom surface, the second semiconductor wafer acting as a spacer between said at least one optical element and said first semiconductor wafer;

wherein said cavity is a resonator.

3. The multilayer patterned wafer composite of claim 2 , wherein said cavity is adapted to generate or detect RF waves, microwaves or ultrasound.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 1, 2010
From: SCHOTT ELECTRONIC PACKAGING ASIA PTE. LTD.
To: WAFER-LEVEL PACKAGING PORTFOLIO LLC
Reel/Frame 025077/0418 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2010
From: SCHOTT AG
To: SCHOTT ELECTRONIC PACKAGING ASIA PTE. LTD.
Reel/Frame 025066/0719 →