Collector for EUV light source
View Patent ↗An apparatus/method may comprise, a multi-layer reflecting coating forming an EUV reflective surface which may comprise an inter-diffusion barrier layer which may comprise a carbide selected from the group ZrC and NbC or a boride selected from the group ZrB 2 and NbB 2 or a disilicide selected from the group ZrSi 2 and NbSi 2 or a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si 3 N 4 . The apparatus and method may comprise an EUV light source collector which may comprise a collecting mirror which may comprise a normal angle of incidence multi-layer reflecting coating; an inter-diffusion barrier layer comprising a material selected from the group comprising a carbide selected from the group ZrC and NbC, or a boride selected from the group ZrB 2 and NbB 2 or a disilicide selected from the group ZrSi 2 and NbSi 2 a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si 3 N 4 .
1. An apparatus comprising:
a multi-layer reflecting coating forming an EUV reflective surface comprising:
an inter-diffusion barrier layer comprising a carbide selected from the group ZrC and NbC.
2. The apparatus of claim 1 further comprising:
a capping layer comprising ruthenium.
3. The apparatus of claim 2 further comprising:
the sputter thickness rate for sputtering of the capping layer material by material comprising a plasma production material is at or below a rate that will result in the capping layer material sustaining such sputtering for greater than a selected lifetime.
4. The apparatus of claim 1 further comprising:
the multilayer reflecting coating comprising multiple alternating layers of an absorber and a separator.
5. The apparatus of claim 4 further comprising:
the absorber comprising molybdenum and the separator comprising silicon.
6. The apparatus of claim 4 further comprising:
the multi-layer reflecting coating comprising a capping layer comprising a material other than the absorber material and the separator material selected to have a sputter thickness rate that will sustain sputtering by a material comprising a plasma production material at or below a rate that will result in a single layer of the capping layer material sustaining such sputtering for greater than a selected time and to have more favorable properties when exposed to ambient or operating environments than those of the absorber material or the separator material.
7. The apparatus of claim 1 further comprising:
a capping layer comprising molybdenum.
8. The apparatus of claim 7 further comprising:
the sputter thickness rate for sputtering of the capping layer material by material comprising a plasma production material is at or below a rate that will result in the capping layer material sustaining such sputtering for greater than a selected lifetime.
9. The apparatus of claim 1 further comprising:
the sputter thickness rate for sputtering of a capping layer material by material comprising a plasma production material is at or below a rate that will result in the capping layer material sustaining such sputtering for greater than a selected lifetime.
10. The apparatus of claim 1 further comprising:
the multilayer reflecting coating comprising multiple alternating layers comprising a multi-layer mirror optimized for a selected nominal center wavelength in the EUV range.
11. The apparatus of claim 1 further comprising:
the multilayer reflecting coating comprising multiple alternating layers comprising MoSi 2 /Si or Mo 2 C/Si, with or without an inter-diffusion barrier layer or inter-diffusion barrier layers.
12. The apparatus of claim 1 further comprising:
the multilayer reflecting coating comprising multiple alternating layers comprising Mo/X/Si/X where X comprises an inter-diffusion barrier layer comprising C or a carbide selected from the group ZrC and NbC.
13. An apparatus comprising:
a multi-layer reflecting coating forming an EUV reflective surface comprising:
an inter-diffusion barrier layer comprising a boride selected from the group ZrB 2 and NbB 2 .
14. The apparatus of claim 13 further comprising:
a capping layer comprising ruthenium.
15. The apparatus of claim 14 further comprising:
the sputter thickness rate for sputtering of the capping layer material by material comprising a plasma production material is at or below a rate that will result in the capping layer material sustaining such sputtering for greater than a selected lifetime.
16. The apparatus of claim 13 further comprising:
the multilayer reflecting coating comprising multiple alternating layers of an absorber and a separator.
17. The apparatus of claim 16 further comprising:
the absorber comprising molybdenum and the separator comprising silicon.
18. The apparatus of claim 16 further comprising:
the multi-layer reflecting coating comprising a capping layer comprising a material other than the absorber material and the separator material selected to have a sputter thickness rate that will sustain sputtering by a material comprising a plasma production material at or below a rate that will result in a single layer of the capping layer material sustaining such sputtering for greater than a selected time and to have more favorable properties when exposed to ambient or operating environments than those of the absorber material or the separator material.
19. The apparatus of claim 13 further comprising:
a capping layer comprising molybdenum.
20. The apparatus of claim 19 further comprising:
the sputter thickness rate for sputtering of the capping layer material by material comprising a plasma production material is at or below a rate that will result in the capping layer material sustaining such sputtering for greater than a selected lifetime.
21. The apparatus of claim 13 further comprising:
the sputter thickness rate for sputtering of a capping layer material by material comprising a plasma production material is at or below a rate that will result in the capping layer material sustaining such sputtering for greater than a selected lifetime.
22. The apparatus of claim 13 further comprising:
the multilayer reflecting coating comprising multiple alternating layers comprising a multi-layer mirror optimized for a selected nominal center wavelength in the EUV range.
23. The apparatus of claim 13 further comprising:
the multilayer reflecting coating comprising multiple alternating layers comprising MoSi 2 /Si or Mo 2 C/Si, with or without an inter-diffusion barrier layer or inter-diffusion barrier layers.
24. The apparatus of claim 13 further comprising:
the multilayer reflecting coating comprising multiple alternating layers comprising Mo/X/Si/X where X comprises an inter-diffusion barrier layer comprising C or a boride selected from the group ZrB 2 and NbB 2 .
25. An apparatus comprising:
a multi-layer reflecting coating forming an EUV reflective surface comprising:
an inter-diffusion barrier layer comprising a disilicide selected from the group ZrSi 2 and NbSi 2 .
26. The apparatus of claim 25 further comprising:
a capping layer comprising ruthenium.
27. The apparatus of claim 26 further comprising:
the sputter thickness rate for sputtering of the capping layer material by material comprising a plasma production material is at or below a rate that will result in the capping layer material sustaining such sputtering for greater than a selected lifetime.
28. The apparatus of claim 25 further comprising:
the multilayer reflecting coating comprising multiple alternating layers of an absorber and a separator.
29. The apparatus of claim 28 further comprising:
the absorber comprising molybdenum and the separator comprising silicon.
30. The apparatus of claim 28 , further comprising:
the multi-layer reflecting coating comprising a capping layer comprising a material other than the absorber material and the separator material selected to have a sputter thickness rate that will sustain sputtering by a material comprising a plasma production material at or below a rate that will result in a single layer of the capping layer material sustaining such sputtering for greater than a selected time and to have more favorable properties when exposed to ambient or operating environments than those of the absorber material or the separator material.
31. The apparatus of claim 25 further comprising:
a capping layer comprising molybdenum.
32. The apparatus of claim 31 further comprising:
the sputter thickness rate for sputtering of a capping layer material by material comprising a plasma production material is at or below a rate that will result in the capping layer material sustaining such sputtering for greater than a selected lifetime.
33. The apparatus of claim 25 further comprising:
the sputter thickness rate for sputtering of a capping layer material by material comprising a plasma production material is at or below a rate that will result in the capping layer material sustaining such sputtering for greater than a selected lifetime.
34. The apparatus of claim 25 further comprising:
the multilayer reflecting coating comprising multiple alternating layers comprising a multi-layer mirror optimized for a selected nominal center wavelength in the EUV range.
35. The apparatus of claim 25 further comprising:
the multilayer reflecting coating comprising multiple alternating layers comprising MoSi 2 /Si or Mo 2 C/Si, with or without an inter-diffusion barrier layer or inter-diffusion barrier layers.
36. The apparatus of claim 25 further comprising:
the multilayer reflecting coating comprising multiple alternating layers comprising Mo/X/Si/X where X comprises an inter-diffusion barrier layer comprising C or a disilicide selected from the group ZrSi 2 and NbSi 2 .
37. An apparatus comprising:
a multi-layer reflecting coating forming an EUV reflective surface comprising:
an inter-diffusion barrier layer comprising a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si 3 N 4 .
38. The apparatus of claim 37 further comprising:
a capping layer comprising ruthenium.
39. The apparatus of claim 37 further comprising:
the multilayer reflecting coating comprising multiple alternating layers of an absorber and a separator.
40. The apparatus of claim 39 further comprising:
the absorber comprising molybdenum and the separator comprising silicon.
41. The apparatus of claim 39 , further comprising:
the multi-layer reflecting coating comprising a capping layer comprising a material other than the absorber material and the separator material selected to have a sputter thickness rate that will sustain sputtering by a material comprising a plasma production material at or below a rate that will result in a single layer of the capping layer material sustaining such sputtering for greater than a selected time and to have more favorable properties when exposed to ambient or operating environments than those of the absorber material or the separator material.
42. The apparatus of claim 37 further comprising:
a capping layer comprising molybdenum.
43. The apparatus of claim 42 further comprising:
the sputter thickness rate for sputtering of a capping layer material by material comprising a plasma production material is at or below a rate that will result in the capping layer material sustaining such sputtering for greater than a selected lifetime.
44. The apparatus of claim 37 further comprising:
the sputter thickness rate for sputtering of a capping layer material by material comprising a plasma production material is at or below a rate that will result in the capping layer material sustaining such sputtering for greater than a selected lifetime.
45. The apparatus of claim 37 further comprising:
the multilayer reflecting coating comprising multiple alternating layers comprising a multi-layer mirror optimized for a selected nominal center wavelength in the EUV range.
46. The apparatus of claim 37 further comprising:
the multilayer reflecting coating comprising multiple alternating layers comprising MoSi 2 /Si or Mo 2 C/Si, with or without an inter-diffusion barrier layer or inter-diffusion barrier layers.
47. The apparatus of claim 37 further comprising:
the multilayer reflecting coating comprising multiple alternating layers comprising Mo/X/Si/X where X comprises an inter-diffusion barrier layer comprising C or a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si 3 N 4 .
48. An apparatus comprising:
an EUV light source collector comprising:
a collecting mirror comprising a normal angle of incidence multi-layer reflecting coating;
an inter-diffusion barrier layer comprising a material selected from the group comprising a carbide selected from the group ZrC and NbC, or a boride selected from the group ZrB 2 and NbB 2 or a disilicide selected from the group ZrSi 2 and NbSi 2 or a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si 3 N 4 .
49. The apparatus of claim 48 further comprising:
the sputter thickness rate for sputtering of a capping layer material by material comprising a plasma production material is at or below a rate that will result in the capping layer material sustaining such sputtering for greater than a selected lifetime.
50. An apparatus comprising:
a multi-layer reflecting coating forming an EUV reflective surface comprising:
an inter-diffusion barrier layer comprising yttrium, scandium or strontium.
51. An apparatus comprising:
an EUV light source collector comprising:
a collecting mirror comprising a normal angle of incidence multi-layer reflecting coating;
an inter-diffusion barrier layer comprising a material comprising yttrium, scandium or strontium.