Gallium nitride material devices and associated methods
View Patent ↗Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the direction of the gate electrode of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.
1. A transistor, comprising:
a substrate;
a gallium nitride material region disposed over the substrate;
a source electrode formed, at least in part, over the gallium nitride material region;
a gate electrode formed, at least in part, over the gallium nitride material region;
a drain electrode formed, at least in part, over the gallium nitride material region;
a passivating layer formed over the gallium nitride material region between the source electrode and the gate electrode, and between the gate electrode and the drain electrode, the gate electrode extending over a portion of the passivating layer a distance directly on the passivating layer in a direction of the drain electrode greater than a distance in a direction of the source electrode;
a source field plate situated, at least in part, over the source electrode and electrically connected to the source electrode by a conductive path formed through a dielectric layer formed over the source electrode, the dielectric layer adjoining the conductive path on all sides between the source field plate and the source electrode;
a via extending through the gallium nitride material and the substrate to a backside of the substrate;
conductive material disposed in the via and electrically connecting the source field plate to a conductive region at the backside of the substrate; and
a barrier layer disposed on sidewalls of the via so as to separate the conductive material from the gallium nitride material region and the substrate, the barrier layer preventing chemical reactions between the conductive material and the substrate, the barrier layer comprising one or more of titanium, tungsten, nickel and platinum,
wherein the source electrode is situated over the conductive material.
2. The transistor of claim 1 , wherein the source field plate extends in a direction toward the gate electrode.
3. The transistor of claim 1 , wherein the source field plate extends over the gate electrode.
4. The transistor of claim 3 , wherein the source field plate extends to a point between about 25% and 75% the distance between the gate electrode and the drain electrode.
5. The transistor of claim 4 , wherein the source field plate extends to a point between about 40% and 60% the distance between the gate electrode and the drain electrode.
6. The transistor of claim 1 , wherein the transistor is an RF transistor.
7. The transistor of claim 1 , wherein the source field plate is connected to a ground potential.
8. The transistor of claim 1 , wherein the conductive region is a contact at the backside of the transistor.
9. The transistor of claim 1 , wherein the conductive material is formed in a via that extends to the backside.
10. The transistor of claim 1 wherein the substrate is silicon.
11. The transistor of claim 1 , wherein the source field plate is formed on the dielectric layer.
12. The transistor of claim 1 , wherein the dielectric layer comprises an encapsulation layer, and wherein the source field plate is formed on the encapsulation layer.
13. The transistor of claim 1 , wherein the passivating layer defines, in part, a gate electrode via in which the gate electrode is formed.
14. The transistor of claim 13 , wherein a cross-sectional area at a top of the gate electrode via is greater than a cross-sectional area at a bottom of the gate electrode via.
15. The transistor of claim 1 , further comprising a compositionally-graded transition layer formed between the substrate and the gallium nitride material region.
16. The transistor of claim 1 , wherein the transistor is capable of operating at an output power of at least 5 W/mm.
17. The transistor of claim 1 , wherein the transistor is capable of operating at an output power of at least 10 W/mm.
18. The transistor of claim 1 , wherein the transistor is capable of operating at a drain efficiency of at least 70%.
19. The transistor of claim 1 , wherein the transistor is capable of operating at a drain efficiency of at least 50%.
20. The transistor of claim 1 , wherein the barrier layer comprises more than one of titanium, tungsten, nickel and platinum alloyed to form a single composition.
21. The transistor of claim 1 , wherein the barrier layer comprises more than one of titanium, tungsten, nickel and platinum formed as a series of different layers.
22. The transistor of claim 1 , wherein the barrier layer comprises a titanium-tungsten alloy.