Patent Assignment
Reel/Frame 038463/0859
Merger and Change of Name
Recorded: 2016-04-13
Pages: 10
Assignors
INFINEON TECHNOLOGIES NORTH AMERICA CORP.
Executed: 2015-09-29
INTERNATIONAL RECTIFIER CORPORATION
Executed: 2015-09-29
INTERNATIONAL RECTIFIER CORPORATION
Executed: 2015-09-29
Assignee
INFINEON TECHNOLOGIES AMERICAS CORP.
101 N. SEPULVEDA BLVD., EL SEGUNDO, CALIFORNIA, 90245
Covered Properties
(185)
Silicide gate process for trench MOSFET
Application:
10/384,897 →
Publication:
US 2003/0168695
Gallium nitride material-based monolithic microwave integrated circuits
Application:
11/261,942 →
Publication:
US 2006/0214289
III-nitride power semiconductor with a field relaxation feature
Power semiconductor device with endless gate trenches
Application:
11/338,215 →
Publication:
US 2006/0163650
Semiconductor Package
Application:
11/378,607 →
Publication:
US 2007/0215997
Semiconductor Package Including a Semiconductor Die Having Redistributed Pads
Gallium Nitride Material Devices and Associated Methods
Semiconductor package
Application:
11/636,210 →
Publication:
US 2007/0158796
Diagnostic/Protective High Voltage Gate Driver Ic (Hvic) for Pdp
Application:
11/668,077 →
Publication:
US 2007/0176855
High Voltage Gate Driver Ic with Multi-Function Gating
Application:
11/848,501 →
Publication:
US 2008/0055200
Gallium Nitride Materials and Methods Associated with the Same
Mosfet Device Having Improved Avalanche Capability
Application:
12/028,101 →
Publication:
US 2008/0191273
Digital Current Sense
Application:
12/037,380 →
Publication:
US 2008/0203997
Harmonic Processor
Application:
12/107,864 →
Publication:
US 2008/0265815
Iii-Nitride Power Semiconductor Device
Iii-Nitride Device
Application:
12/174,329 →
Publication:
US 2009/0050939
Iii-Nitride Semiconductor Device
Application:
12/351,967 →
Publication:
US 2010/0006895
Buck converter with III-nitride switch for substantially increased input-to-output voltage ratio
Self-aligned vertical group III-V transistor
Application:
12/456,064 →
Publication:
US 2010/0314695
Deep source electrode MOSFET
Application:
12/460,434 →
Publication:
US 2009/0278198
Semiconductor structure including a field modulation body and method for fabricating same
Application:
12/584,293 →
Publication:
US 2011/0049569
Highly conductive source/drain contacts in III-nitride transistors
Method for fabricating a shallow and narrow trench FET and related structures
Stress modulated group III-V semiconductor device and related method
Application:
12/928,946 →
Publication:
US 2012/0153351
Gate Driver with Multiple Slopes for Plasma Display Panels
High Voltage Durability III-Nitride HEMT
Application:
13/197,676 →
Publication:
US 2011/0284869
Flyback Driver for Use in a Flyback Power Converter and Related Method
System and Method for Providing Active Power Balancing
Composite Semiconductor Device with Turn-On Prevention Control
High Voltage Composite Semiconductor Device with Protection for a Low Voltage Device
III-Nitride Transistor with Passive Oscillation Prevention
Application:
13/419,820 →
Publication:
US 2012/0241820
Stacked Composite Device Including a Group Iii-V Transistor and a Group Iv Vertical Transistor
Stacked Composite Device Including a Group III-V Transistor and a Group IV Diode
Application:
13/434,524 →
Publication:
US 2012/0256190
Integrated Power Stage
Application:
13/454,039 →
Publication:
US 2012/0274366
Integrated Semiconductor Device
Small-Outline Package for a Power Transistor
Application:
13/557,716 →
Publication:
US 2013/0049079
Porous Metallic Film as Die Attach and Interconnect
Application:
13/655,983 →
Publication:
US 2013/0256894
Compact Wirebonded Power Quad Flat No-Lead (PQFN) Package
Power Converter Having an Advanced Control Ic
Power Module Package Having a Multi-Phase Inverter and Power Factor Correction
Voltage Regulator Having an Emulated Ripple Generator
Transistor Having Increased Breakdown Voltage
Solderable Contact and Passivation for Semiconductor Dies
Method for Forming a Reliable Solderable Contact
Integrated Dual Power Converter Package Having Internal Driver Ic
Group III-V and Group IV Composite Switch
Group III-V and Group IV Composite Diode
Application:
13/781,080 →
Publication:
US 2013/0175542
Trench FET with Ruggedness Enhancement Regions
Oscillation Free Fast-Recovery Diode
Application:
13/851,766 →
Publication:
US 2013/0277711
Reverse Rotation of a Motor Configured for Operation in a Forward Direction
Power Converter with Tank Circuit and Over-Voltage Protection
Stacked Half-Bridge Package with a Common Leadframe
Monolithic Group III-V Power Converter
Application:
13/927,578 →
Publication:
US 2013/0342184
Robust Fused Transistor
Application:
13/937,173 →
Publication:
US 2014/0027778
Integrated III-Nitride and Silicon Device
Power Converter Including Integrated Driver Providing Overcurrent Protection
Monolithic Group Iii-V and Group Iv Device
Application:
13/969,392 →
Publication:
US 2013/0337626
Integrated Group III-V Power Stage
Application:
13/975,695 →
Publication:
US 2014/0070627
Integrated Composite Group III-V and Group IV Semiconductor Device
Application:
14/019,738 →
Publication:
US 2014/0008663
Semiconductor Package Including Conductive Carrier Coupled Power Switches
Power Converter Package Including Top-Drain Configured Power FET
Enhancement Mode III-Nitride Device
Application:
14/037,808 →
Publication:
US 2014/0030858
Semiconductor Package with Heat Spreader
Group III-V Device with Strain-Relieving Layers
Active Area Shaping of III-Nitride Devices Utilizing A Field Plate Defined By A Dielectric Body
Active Area Shaping of III-Nitride Devices Utilizing a Source-Side Field Plate and a Wider Drain-Side Field Plate
III-Nitride Device Having an Enhanced Field Plate
Application:
14/085,037 →
Publication:
US 2014/0159116
Reduced Gate Charge Trench Field-Effect Transistor
Application:
14/095,063 →
Publication:
US 2014/0167152
Trench Fet Having Merged Gate Dielectric
Power Quad Flat No-Lead (PQFN) Package in a Single Shunt Inverter Circuit
Power Quad Flat No-Lead (PQFN) Semiconductor Package with Leadframe Islands for Multi-Phase Power Inverter
Open Source Power Quad Flat No-Lead (PQFN) Package
Semiconductor Structure Including A Spatially Confined Dielectric Region
Application:
14/140,222 →
Publication:
US 2014/0197461
Power Quad Flat No-Lead (PQFN) Package Having Bootstrap Diodes on a Common Integrated Circuit (IC)
Power Quad Flat No-Lead (PQFN) Package Having Control and Driver Circuits
Control and Driver Circuits on a Power Quad Flat No-Lead (PQFN) Leadframe
Semiconductor Package Having Multi-Phase Power Inverter with Internal Temperature Sensor
Semiconductor Package Having an Over-Temperature Protection Circuit Utilizing Multiple Temperature Threshold Values
Semiconductor Packages Utilizing Leadframe Panels with Grooves in Connecting Bars
Combined Sense Signal Generation and Detection
Sintering Utilizing Non-Mechanical Pressure
Application:
14/163,037 →
Publication:
US 2014/0224409
Inverter Circuit Including Short Circuit Protected Composite Switch
Application:
14/171,687 →
Publication:
US 2014/0225163
Drain Pad Having a Reduced Termination Electric Field
Application:
14/185,646 →
Publication:
US 2014/0239349
Iii-Nitride Power Conversion Circuit
III-Nitride Transistor with High Resistivity Substrate
Application:
14/188,316 →
Publication:
US 2014/0197462
RF Switch Gate Control
Application:
14/195,511 →
Publication:
US 2014/0253217
Stacked Half-Bridge Package
DC/DC Converter with III-Nitride Switches
Integrated Power Device with Iii-Nitride Half Bridges
Biased Reactive Refractory Metal Nitride Capped Contact of Group Iii-V Semiconductor Device
Semiconductor Device with a Field Plate Double Trench Having a Thick Bottom Dielectric
Power Semiconductor Device with Contiguous Gate Trenches and Offset Source Trenches
Depletion Mode Group Iii-V Transistor with High Voltage Group Iv Enable Switch
Integrated III-Nitride D-Mode HFET with Cascoded Pair Half Bridge
Group III-V Device with a Selectively Reduced Impurity Concentration
Monolithic Integrated Composite Group III-V and Group IV Semiconductor Device and IC
Application:
14/472,974 →
Publication:
US 2014/0367744
Adaptive Off Time Control Scheme for Semi-Resonant and Hybrid Converters
Semiconductor Device with Reduced Contact Resistance
Application:
14/483,989 →
Publication:
US 2015/0001722
Voltage Converter with VCC-Less RDSon Current Sensing Circuit
III-Nitride Device and FET in a Package
Group III-V Device Including a Buffer Termination Body
Application:
14/505,252 →
Publication:
US 2015/0115327
Iii-Nitride Device with Solderable Front Metal
Integrated Device Including Silicon and III-Nitride Semiconductor Devices
Application:
14/515,233 →
Publication:
US 2015/0097196
Compact Single-Die Power Semiconductor Package
Compact Multi-Die Power Semiconductor Package
Wafer Scale Package for High Power Devices
Group III-V Transistor with Semiconductor Field Plate
Power Converter Package with an Integrated Output Inductor
Dual-Gated Group III-V Merged Transistor
Power Semiconductor Package with Integrated Heat Spreader and Partially Etched Conductive Carrier
Array Based Fabrication of Power Semiconductor Package with Integrated Heat Spreader
Circuit and Method for Producing an Average Output Inductor Current Indicator
Composite Power Device with ESD Protection Clamp
Application:
14/553,419 →
Publication:
US 2015/0162321
Group III-V Voltage Converter with Monolithically Integrated Level Shifter, High Side Driver, and High Side Power Switch
Application:
14/554,838 →
Publication:
US 2015/0162832
Gallium Nitride Devices with Discontinuously Graded Transition Layer
Semiconductor Structure with Compositionally-Graded Transition Layer
III-Nitride Semiconductor Device Fabrication
Application:
14/602,193 →
Publication:
US 2015/0132933
Semiconductor Package with Via-Coupled Power Transistors
Gallium Nitride Devices
High Performance III-Nitride Power Device
Enhancement Mode III-Nitride Switch
Application:
14/619,485 →
Publication:
US 2015/0155275
III-Nitride Semiconductor Structures with Strain Absorbing Interlayers
Semiconductor Package for III-Nitride Transistor Stacked with Diode
Semiconductor Package with Integrated Die Paddles for Power Stage
Power Semiconductor Device with Embedded Field Electrodes
Semiconductor Package with Conductive Clips
System on Chip with Power Switches
Power Converter with Split Voltage Supply
Power Semiconductor Device with Low RDSON and High Breakdown Voltage
Application:
14/685,257 →
Publication:
US 2015/0325685
Surface Mountable Power Components
Compact Power Quad Flat No-Lead (Pqfn) Package
Group III-V Device Including a Shield Plate
Application:
14/707,966 →
Publication:
US 2015/0340483
Semiconductor Package with Conductive Clip
Power Semiconductor Package with Conductive Clip and Related Method
Semiconductor Package with Multiple Dies
Application:
14/717,277 →
Publication:
US 2015/0332988
Power Semiconductor Package with a Common Conductive Clip
Power Semiconductor Package with Conductive Clips
Group III-V HEMT Having a Selectably Floating Substrate
Group III-V HEMT Having a Diode Controlled Substrate
Application:
14/728,563 →
Publication:
US 2015/0371987
Composite Group Iii-V and Group Iv Transistor Having a Switched Substrate
Power Semiconductor Package
Group III-V Transistor Utilizing a Substrate Having a Dielectrically-Filled Region
Application:
14/733,030 →
Publication:
US 2016/0005845
Group III-V Transistor with Voltage Controlled Substrate
Application:
14/733,426 →
Publication:
US 2016/0005816
Group III-V Lateral Transistor with Backside Contact
Application:
14/733,685 →
Publication:
US 2016/0005821
Power Converter Utilizing a Resonant Half-Bridge and Charge Pump Circuit
III-Nitride Based Semiconductor Structure
Transistor with Elevated Drain Termination
Fabrication of III-Nitride Power Device with Reduced Gate to Drain Charge
Edge Termination Structure Having a Termination Charge Region Below a Recessed Field Oxide Region
Composite Device with Integrated Diode
Semiconductor Package with Switch Node Integrated Heat Spreader
Enhancement Mode III-Nitride Transistor
Semiconductor Package with Integrated Heat Spreader
Application:
14/825,509 →
Publication:
US 2015/0348888
III-Nitride Device with Improved Transconductance
Application:
14/826,599 →
Publication:
US 2015/0357458
Fabrication of III-Nitride Power Semiconductor Device
Application:
14/831,009 →
Publication:
US 2015/0357182
Group III-V Device with a Selectively Modified Impurity Concentration
Fault and Short-Circuit Protected Output Driver
Compact High-Voltage Semiconductor Package
Power Converter Package with Integrated Output Inductor
Power Semiconductor Device with Source Trench and Termination Trench Implants
Insertable Power Unit with Mounting Contacts for Plugging into a Mother Board
Application:
14/857,430 →
Publication:
US 2016/0105983
Power Unit with Conductive Slats
Application:
14/857,536 →
Publication:
US 2016/0105984
Robust and Reliable Power Semiconductor Package
Application:
14/861,186 →
Publication:
US 2016/0104688
Semiconductor Package with Integrated Semiconductor Devices and Passive Component
Passive Component Integrated with Semiconductor Device in Semiconductor Package
Semiconductor Structure Having Integrated Snubber Resistance
Power Semiconductor Package Having Vertically Stacked Driver Ic
Packaged Assembly for High Density Power Applications
Fabrication of Semiconductor Device Using Alternating High and Low Temperature Layers
Compressible Respiratory Therapy Hose and Collecting Rod for Storage
Application:
14/909,991 →
Publication:
US 2016/0199613
Dual Power Converter Package
Power Converter Package Using Driver Ic
Iii-Nitride Semiconductor Structure with Intermediate and Transition Layers
Application:
14/926,279 →
Publication:
US 2016/0126315
Method for Preventing Delamination and Cracks in Group III-V Wafers
Preventing Delamination and Cracks in Fabrication of Group Iii-V Devices
Bipolar Semiconductor Device Having a Deep Charge-Balanced Structure
Igbt Having Deep Gate Trench
Super Junction IGBT with PNN Structure for High Frequency Applications
Application:
62/128,922 →
Inductor in PQFN with Embedded Ferrite Core
Application:
62/137,938 →
Dual Gauge Leadframe with Embedded Inductor
Application:
62/137,967 →
Solid State Apparatus and Method for Disconnecting and Reconnecting Sensitive Battery Chemistries
Application:
62/166,607 →
Power Semiconductor Package with Conductive Clip and Embedded Inductor
Application:
62/172,947 →
Robust High Performance Semiconductor Package
Application:
62/196,799 →
Dry Ice Cleaning in Hermetic Packages
Application:
62/198,085 →
Structure and Method for Thin Die Separation and Support
Application:
62/215,907 →
Related Assignments
(7)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jan 22, 2010
From: HE, ZHI
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 023831/0941 →
Assignment of Assignor's Interest
Feb 4, 2010
From: BRIERE, MICHAEL A.
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 023898/0920 →
Merger and Change of Name
Mar 30, 2016
From: INTERNATIONAL RECTIFIER CORPORATION; INFINEON TECHNOLOGIES AMERICAS CORP.
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 038137/0456 →
Merger and Change of Name
Mar 30, 2016
From: INTERNATIONAL RECTIFIER CORPORATION; INFINEON TECHNOLOGIES AMERICAS CORP.
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 038143/0190 →
Confidential Exclusive License and Ip Purchase Agreements That Restrict Patent Assignment by Current Owner (Only Non-Confidential, Public Materials Summarizing Agreements and Litigation Disputes Relating to the Same Attached)
Nov 3, 2017
From: INTERNATIONAL RECTIFIER CORPORATION
To: NITRONEX LLC; MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
Reel/Frame 044532/0627 →
Assignment of Assignor's Interest
Jan 4, 2019
From: INFINEON TECHNOLOGIES AMERICAS CORP.
To: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
Reel/Frame 047908/0419 →
Assignment of Assignor's Interest
Jan 4, 2019
From: INFINEON TECHNOLOGIES AMERICAS CORP.
To: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
Reel/Frame 047908/0027 →