IP Library Granted Patent US 9,601,418
Granted Patent B2
US 9,601,418 · App. 14/209,569 · Granted Mar 21, 2017

Stacked half-bridge package

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Quick Facts
Patent No.
US 9,601,418
App. No.
14/209,569
Granted
Mar 21, 2017
Kind
B2
Abstract

According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. A current carrying layer is situated on the sync drain; the control transistor and the sync transistor being stacked on one another, where the current carrying layer provides a high current connection between the sync drain and the control source.

Claims (23)

1. A stacked half-bridge package comprising:

a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate;

a sync transistor having a sync drain for connection to said output terminal, a sync source coupled to a low voltage input, and a sync gate;

said control and sync transistors being stacked over one another, wherein a current carrying layer provides an electrical connection between said sync drain and said control source.

2. The stacked half-bridge package of claim 1 , wherein an output terminal leadframe provides connection for said current carrying layer.

3. The stacked half-bridge package of claim 1 , comprising a solderable front metal (SFM) situated on said current carrying layer.

4. The stacked half-bridge package of claim 1 , wherein a control drain leadframe provides connection for said control drain.

5. The stacked half-bridge package of claim 1 , wherein a conductive source clip provides' connection between said sync source and a sync source leadframe.

6. The stacked half-bridge package of claim 1 , wherein a conductive source clip comprises a source clip leg that is of a thickness greater than that of said sync transistor.

7. The stacked half-bridge package of claim 1 , wherein a conductive source clip comprises a source clip leg that is of a thickness greater than a combined thickness of said sync transistor and said current carrying layer.

8. The stacked half-bridge package of claim 1 , wherein a conductive source clip comprises a source clip web that is connected to said sync source and including a source clip leg that is connected to a sync source leadframe.

9. The stacked half-bridge package of claim 1 , wherein a conductive source clip is connected to said sync source at a topside of said stacked half-bridge package.

10. The stacked half-bridge package of claim 1 , wherein respective bottom surfaces of a sync source leadframe, a control drain leadframe, and an output terminal leadframe are substantially flush with one another.

11. The stacked half-bridge package of claim 1 , wherein at least one control gate bondwire provides electrical connection for said control gate.

12. The stacked half-bridge package of claim 1 , wherein at least one control gate bondwire provides electrical connection between said control gate and a control gate leadframe.

13. The stacked half-bridge package of claim 1 , wherein at least one sync gate bondwire provides electrical connection for said sync gate.

14. The stacked half-bridge package of claim 1 , wherein at least one sync gate bondwire provides electrical connection between said sync gate and a sync gate leadframe.

15. The stacked half-bridge package of claim 1 , wherein said sync source comprises a plurality of sync source pads.

16. The stacked half-bridge package of claim 1 , wherein said control transistor has top and bottom surfaces, said control drain being on said bottom surface and said control source and said control gate being on said top surface.

17. The stacked half-bridge package of claim 1 , wherein said sync transistor has top and bottom surfaces, said sync drain being on said bottom surface and said sync source and said sync gate being on said top surface.

18. The stacked half-bridge package of claim 1 , wherein respective bottom surfaces of a sync source leadframe, a control drain leadframe, a sync gate leadframe, a control gate leadframe, and an output terminal leadframe are substantially flush with one another.

19. The stacked half-bridge package of claim 1 , further comprising an output terminal leadframe that is of a thickness greater than that of a control drain leadframe.

20. The stacked half-bridge package of claim 1 , further comprising an output terminal leadframe that is of a thickness greater than a combined thickness of a control drain leadframe and said control transistor.

Assignments (2)
MERGER AND CHANGE OF NAME Recorded Apr 13, 2016
From: INFINEON TECHNOLOGIES NORTH AMERICA CORP.; INTERNATIONAL RECTIFIER CORPORATION; INTERNATIONAL RECTIFIER CORPORATION
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 038463/0859 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 13, 2014
From: CHO, EUNG SAN; CHEAH, CHUAN; SAWLE, ANDREW N.
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 032433/0554 →