Group III-V Device Including a Shield Plate
There are disclosed herein various implementations of a group III-V device including a shield plate. Such a group III-V device includes a substrate, a transition body situated over the substrate, a device channel layer situated over the transition body, and a device barrier layer situated over the device channel layer and producing a device two-dimensional electron gas (2-DEG). The group III-V device also includes a drain electrode coupled to the device barrier layer, and a shield plate, which may be coupled to the drain electrode or may be a floating shield plate. The shield plate is configured to substantially shield the device 2-DEG from charge centers situated over the device barrier layer.
1 . A group III-V device comprising:
a substrate;
a transition body situated over said substrate;
a device channel layer situated over said transition body, and a device barrier layer situated over said device channel layer thereby producing a device two-dimensional electron gas (2DEG);
a drain electrode of said group III-V device coupled to said device barrier layer;
a shield plate coupled to said drain electrode, said shield plate configured to substantially shield said device 2DEG from charge centers situated over said device barrier layer.
2 . The group III-V device of claim 1 , wherein said shield plate is situated over said drain electrode.
3 . The group III-V device of claim 1 , wherein said shield plate comprises a metal plate.
4 . The group III-V device of claim 1 , further comprising a gate electrode, wherein said shield plate extends at least partially over said gate electrode.
5 . The group III-V device of claim 1 , further comprising a gate electrode and a field plate overlying said gate electrode, wherein said shield plate extends at least partially over said field plate.
6 . The group III-V device of claim 1 , wherein said shield plate comprises a doped group III-V layer having a doping concentration of at least approximately 10 12 charge/cm 2 .
7 . The group III-V device of claim 1 , further comprising a gate electrode, wherein said shield plate is situated between said gate electrode and said drain electrode.
8 . The group III-V device of claim 1 , wherein said shield plate comprises a semiconductor plate.
9 . The group III-V device of claim 1 , wherein said shield plate comprises a resistive plate.
10 . The group III-V device of claim 1 , wherein said group III-V device comprises a III-Nitride high electron mobility transistor (HEMT).
11 . A group III-V device comprising:
a substrate;
a transition body situated over said substrate;
a device channel layer situated over said transition body, and a device barrier layer situated over said device channel layer thereby producing a device two-dimensional electron gas (2DEG);
a drain electrode of said group III-V device coupled to said device barrier layer;
a floating shield plate being adjacent to said drain electrode, said floating shield plate configured to substantially shield said device 2DEG from charge centers situated over said device barrier layer.
12 . The group III-V device of claim 11 , further comprising a gate electrode, wherein said floating shield plate is situated between said gate electrode and said drain electrode.
13 . The group III-V device of claim 11 , wherein said floating shield plate comprises a metal plate.
14 . The group III-V device of claim 11 , further comprising a gate electrode and a field plate overlying said gate electrode, wherein said floating shield plate extends at least partially below said field plate.
15 . The group III-V device of claim 11 , wherein said floating shield plate comprises a doped group III-V layer having a doping concentration of at least approximately 10 12 charge/cm 2 .
16 . The group III-V device of claim 11 , wherein said floating shield plate comprises a semiconductor plate.
17 . The group III-V device of claim 11 , wherein said floating shield plate comprises a resistive plate.
18 . The group III-V device of claim 11 , wherein said floating shield plate is situated over said drain electrode.
19 . The group III-V device of claim 11 , further comprising a gate electrode, wherein said floating shield plate extends at least partially over said gate electrode.
20 . The group III-V device of claim 11 , wherein said group III-V device comprises a III-Nitride high electron mobility transistor (HEMT).