Oscillation Free Fast-Recovery Diode
In one implementation, a diode providing a substantially oscillation free fast-recovery includes at least one anode diffusion formed at a front side of a semiconductor die, and a cathode layer formed at a back side of the semiconductor die. The diode also includes a drift region and a buffer layer situated between the drift region and the cathode layer to enable the substantially oscillation free fast-recovery by the diode. In one implementation, the buffer layer is N type doped using hydrogen as a dopant.
1 . A diode providing a substantially oscillation free fast-recovery, said diode comprising:
at least one anode diffusion formed at a front side of a semiconductor die;
a cathode layer formed at a back side of said semiconductor die;
a drift region and a buffer layer situated between said drift region and said cathode layer to enable said substantially oscillation free fast-recovery by said diode.
2 . The diode of claim 1 , wherein said buffer layer is produced by implanting an N type dopant through said back side of said semiconductor die.
3 . The diode of claim 1 , wherein said buffer layer is N type doped using hydrogen as an implant.
4 . The diode of claim 1 , wherein said diode is configured to tolerate a junction temperature up to approximately 175° C.
5 . The diode of claim 1 , wherein said diode has a breakdown voltage of up to approximately 1700 V.
6 . The diode of claim 1 , wherein said diode has a current rating of up to approximately 600 A.
7 . The diode of claim 1 , wherein an anode of said diode is coupled to an emitter of an insulated-gate bipolar transistor (IGBT), and a cathode of said diode is coupled to a collector of said IGBT.
8 . The diode of claim 1 , further comprising a solderable front metal (SFM) providing an anode contact over said front side of said semiconductor die.
9 . The diode of claim 1 , wherein said semiconductor die is a reduced thickness silicon die from an ultra-thin wafer (UTW).
10 . The diode of claim 1 , wherein said semiconductor die has a thickness of less than approximately 80 μm.
11 . A diode providing a substantially oscillation free fast-recovery, said diode comprising:
at least one anode diffusion formed at a front side of a semiconductor die, and a cathode layer formed at a back side of said semiconductor die;
a drift region and a buffer layer situated between said drift region and said cathode layer, wherein said buffer layer is N type doped using hydrogen as a dopant.
12 . The diode of claim 11 , wherein said buffer layer is N type doped through said back side of said semiconductor die.
13 . The diode of claim 11 , wherein said diode is configured to tolerate a junction temperature up to approximately 175° C.
14 . The diode of claim 11 , wherein said diode has a breakdown voltage of up to approximately 1700 V.
15 . The diode of claim 11 , wherein said diode has a current rating of up to approximately 600 A.
16 . The diode of claim 11 , wherein said diode provides said substantially oscillation free fast-recovery up to frequencies of approximately 200 kHz.
17 . The diode of claim 11 , wherein an anode of said diode is coupled to an emitter of an insulated-gate bipolar transistor (IGBT), and a cathode of said diode is coupled to a collector of said IGBT.
18 . The diode of claim 11 , further comprising a solderable front metal (SFM) providing an anode contact over said front side of said semiconductor die.
19 . The diode of claim 11 , wherein said semiconductor die is a reduced thickness silicon die from an ultra-thin wafer (UTW).
20 . The diode of claim 11 , wherein said semiconductor die has a thickness of less than approximately 80 μm.