Group III-V and Group IV Composite Diode
In one implementation, a group III-V and group IV composite diode includes a group IV diode in a lower active die, the group IV diode having an anode situated on a bottom side of the lower active die. The group III-V and group IV composite diode also includes a group III-V transistor in an upper active die stacked over the lower active die, the group III-V transistor having a drain, a source, and a gate situated on a top side of the upper active die. The source of the group III-V transistor is electrically coupled to a cathode of the group IV diode using a through-semiconductor via (TSV) of the upper active die.
1 . A composite diode comprising:
a group IV diode in a lower active die, an anode of said group IV diode being situated on a bottom side of said lower active die;
a group III-V transistor in an upper active die stacked over said lower active die, a drain, a source, and a gate of said group III-V transistor being situated on a top side of said upper active die;
said source of said group III-V transistor being electrically coupled to a cathode of said group IV diode using a through-semiconductor via (TSV) of said upper active die.
2 . The composite diode of claim 1 , wherein said cathode of said group IV diode is situated on a top side of said lower active die.
3 . The composite diode of claim 1 , wherein said TSV does not reach a bottom side of said upper active die.
4 . The composite diode of claim 1 , wherein said TSV reaches a highly conductive substrate in said upper active die, said highly conductive substrate being in electrical contact with said cathode of said group IV diode.
5 . The composite diode of claim 1 , wherein said TSV reaches a bottom side of said upper active die.
6 . The composite diode of claim 1 , wherein said group III-V transistor is a normally ON transistor.
7 . The composite diode of claim 1 , wherein said group III-V transistor is a high-voltage (HV) transistor and said group IV diode is a low-voltage (LV) diode.
8 . The composite diode of claim 1 , wherein said group III-V transistor is a III-Nitride high electron mobility transistor (III-Nitride HEMT).
9 . The composite diode of claim 1 , wherein said group III-V transistor comprises gallium nitride (GaN).
10 . The composite diode of claim 1 , wherein said group IV diode comprises silicon.
11 . A III-Nitride-silicon composite diode comprising:
a silicon diode in a lower active die, an anode of said silicon diode being situated on a bottom side of said lower active die;
a III-Nitride transistor in an upper active die stacked over said lower active die, a drain, a source, and a gate of said III-Nitride transistor being situated on a top side of said upper active die;
said source of said III-Nitride transistor being electrically coupled to a cathode of said silicon diode using a through-semiconductor via (TSV) of said upper active die.
12 . The III-Nitride-silicon composite diode of claim 11 , wherein said cathode of said silicon diode is situated on a top side of said lower active die.
13 . The III-Nitride-silicon composite diode of claim 11 , wherein said TSV does not reach a bottom side of said upper active die.
14 . The III-Nitride-silicon composite diode of claim 11 , wherein said TSV reaches a highly conductive substrate in said upper active die, said highly conductive substrate being in electrical contact with said cathode of said silicon diode.
15 . The III-Nitride-silicon composite diode of claim 14 , wherein said highly conductive substrate comprises silicon.
16 . The III-Nitride-silicon composite diode of claim 11 , wherein said TSV reaches a bottom side of said upper active die.
17 . The III-Nitride-silicon composite diode of claim 11 , wherein said III-Nitride transistor is a normally ON transistor.
18 . The III-Nitride-silicon composite diode of claim 11 , wherein said III-Nitride transistor is a high-voltage (HV) transistor and said silicon diode is a low-voltage (LV) diode.
19 . The III-Nitride-silicon composite switch of claim 11 , wherein said III-Nitride transistor is a III-Nitride high electron mobility transistor (III-Nitride HEMT).