Integrated power device with III-nitride half bridges
View Patent ↗A semiconductor device that includes a plurality of isolated half-bridges formed in a common semiconductor die.
1. A single semiconductor die having formed therein an integrated power device comprising:
a power stage including a plurality of parallel-connected half-bridges each including a high side III-nitride power semiconductor device and a low side III-nitride power semiconductor device;
said high side III-nitride power semiconductor device and said low side III-nitride power semiconductor device, each including source fingers, drain fingers, and gate fingers;
said source fingers of said high side III-nitride power semiconductor device and said drain fingers of said low side III-nitride power semiconductor device being coupled to one another;
wherein said integrated power device includes an isolation trench in said single semiconductor die to electrically isolate said high side and low side III-nitride power semiconductor devices.
2. The single semiconductor die of claim 1 , wherein said high side III-nitride power semiconductor device comprises a III-nitride heterojunction that includes one III-nitride semiconductor body having one band gap formed over another III-nitride semiconductor body having another band gap to generate a two-dimensional electron gas.
3. The single semiconductor die of claim 1 , wherein said low side III-nitride power semiconductor device comprises a III-nitride heterojunction that includes one III-nitride semiconductor body having one band gap formed over another III-nitride semiconductor body having another band gap to generate a two-dimensional electron gas.
4. The single semiconductor die of claim 2 , wherein said one III-nitride body comprises AlGaN and said another III-nitride body comprises GaN.
5. The single semiconductor die of claim 3 , wherein said one III-nitride body comprises AlGaN and said another III-nitride body comprises GaN.
6. The single semiconductor die of claim 1 , wherein said source fingers and said drain fingers are alternately arranged in an interdigitated pattern.
7. A single semiconductor die having formed therein an integrated power device comprising:
a first Ill-nitride power semiconductor device and a second III-nitride power semiconductor device, each including source fingers, drain fingers, and gate fingers;
said source fingers of said first III-nitride power semiconductor device and said drain fingers of said second III-nitride power semiconductor device being coupled to one another;
a first output of a first half-bridge coupled to a first gate of said first III-nitride power semiconductor device;
a second output of a second half-bridge coupled to a second gate of said second III-nitride power semiconductor device;
wherein said integrated power device includes an isolation trench in said single semiconductor die to electrically isolate said first and second III-nitride power semiconductor devices.
8. The single semiconductor die of claim 7 , wherein said first III-nitride power semiconductor device comprises a III-nitride heterojunction that includes one III-nitride semiconductor body having one band gap formed over another III-nitride semiconductor body having another band gap to generate a two-dimensional electron gas.
9. The single semiconductor die of claim 7 , wherein said second III-nitride power semiconductor device comprises a III-nitride heterojunction that includes one III-nitride semiconductor body having one band gap formed over another III-nitride semiconductor body having another band gap to generate a two-dimensional electron gas.
10. The single semiconductor die of claim 8 , wherein said one III-nitride body comprises AlGaN and said another III-nitride body comprises GaN.
11. The single semiconductor die of claim 9 , wherein said one III-nitride body comprises AlGaN and said another III-nitride body comprises GaN.
12. The single semiconductor die of claim 7 , wherein said source fingers and said drain fingers are alternately arranged in an interdigitated pattern.