Power converter including integrated driver providing overcurrent protection
View Patent ↗In one implementation, a power converter includes an output stage integrated circuit (IC) in a group III-V die including a depletion mode group III-V transistor, and a driver IC in a group IV die. The driver IC is configured to drive the output stage IC. In addition, a group IV control switch in the group IV die is cascoded with the depletion mode group III-V transistor. The power converter further includes an overcurrent protection circuit for the depletion mode group III-V transistor, the overcurrent protection circuit monolithically integrated in the group IV die.
1. A power converter comprising:
an output stage integrated circuit (IC) in a group III-V die including a depletion mode group III-V transistor;
a driver IC in a group IV die for driving said output stage IC;
a group IV control switch in said group IV die cascoded with said depletion mode group III-V transistor;
an overcurrent protection circuit for said depletion mode group III-V transistor, said overcurrent protection circuit monolithically integrated in said group IV die;
wherein said overcurrent protection circuit is in parallel with said group IV control switch.
2. The power converter of claim 1 , wherein said power converter is enclosed in a package configured to contain only said group IV die and said group III-V die.
3. The power converter of claim 1 , wherein said overcurrent protection circuit comprises a current sensing circuit configured to sense a predetermined fraction of a current through said depletion mode group III-V transistor.
4. The power converter of claim 1 , wherein said overcurrent protection circuit includes a transistor having a control terminal tied to a control terminal of said group IV control switch.
5. The power converter of claim 1 , wherein an output signal of said overcurrent protection circuit is fed to a control logic block of said driver IC.
6. The power converter of claim 1 , wherein said depletion mode group III-V transistor comprises a III-Nitride high electron mobility transistor (HEMT).
7. The power converter of claim 1 , wherein said group IV control switch comprises a silicon control field-effect transistor (FET), said overcurrent protection circuit being coupled between a drain and a source of said silicon control FET.
8. A power converter comprising:
an output stage integrated circuit (IC) including a high side depletion mode group III-V transistor and a low side depletion mode group III-V transistor monolithically integrated in a group III-V die;
a driver IC in a group IV die for driving said output stage IC;
a high side group IV control switch in said group IV die cascoded with said high side depletion mode group III-V transistor;
a low side group IV control switch in said group IV die cascoded with said low side depletion mode group III-V transistor;
a high side overcurrent protection circuit for said high side depletion mode group III-V transistor, wherein said high side overcurrent protection circuit is in parallel with said high side group IV control switch;
a low side overcurrent protection circuit for said low side depletion mode group III-V transistor, wherein said low side overcurrent protection circuit is in parallel with said low side group IV control switch;
said high side and low side overcurrent protection circuits monolithically integrated in said group IV die.
9. The power converter of claim 8 , wherein said power converter is enclosed in a package configured to contain only said group IV die and said group III-V die.
10. The power converter of claim 8 , wherein said high side and low side overcurrent protection circuits comprise current sensing circuits configured to sense a predetermined fraction of a current through said respective high side and low side depletion mode group III-V transistors.
11. The power converter of claim 8 , wherein an output signal of said high side overcurrent protection circuit is fed to a high side control logic block of said driver IC, and an output signal of said low side overcurrent protection circuit is fed to a low side control logic block of said driver IC.
12. The power converter of claim 8 , wherein said high side and low side depletion mode group III-V transistors comprise III-Nitride high electron mobility transistors (HEMTs).
13. The power converter of claim 8 , wherein said high side and low side group IV control switches comprise silicon control field-effect transistor (FETs), said high side and low side overcurrent protection circuits respectively coupled between a drain and a source of said high side and low side silicon control FETs.
14. A power converter comprising:
an output stage integrated circuit (IC) in a group III-V die including a depletion mode group III-V transistor;
a driver IC in a group IV die for driving said output stage IC;
an overcurrent protection circuit for said depletion mode group III-V transistor, said overcurrent protection circuit monolithically integrated in said group IV die;
wherein said overcurrent protection circuit is in parallel with said group IV control switch;
a group IV control switch in said group IV die cascoded with said depletion mode group III-V transistor, such that said depletion mode group III-V transistor operates as an enhancement mode group III-V transistor.
15. The power converter of claim 14 , wherein said power converter is enclosed in a package configured to contain only said group IV die and said group III-V die.
16. The power converter of claim 14 , wherein said overcurrent protection circuit comprises a current sensing circuit configured to sense a predetermined fraction of a current through said depletion mode group III-V transistor.
17. The power converter of claim 14 , wherein said overcurrent protection circuit includes a transistor having a control terminal tied to a control terminal of said group IV control switch.
18. The power converter of claim 14 , wherein an output signal of said overcurrent protection circuit is fed to a control logic block of said driver IC.
19. The power converter of claim 14 , wherein said depletion mode group III-V transistor comprises a III-Nitride high electron mobility transistor (HEMT).
20. The power converter of claim 14 , wherein said group IV control switch comprises a silicon control field-effect transistor (FET), said overcurrent protection circuit being coupled between a drain and a source of said silicon control FET.