Surface mountable power components
View Patent ↗According to an exemplary implementation, a power component includes a component substrate and a power semiconductor device electrically and mechanically coupled to the component substrate. The power component also includes at least one first peripheral contact and at least one second peripheral contact situated on the component substrate. A power semiconductor device is situated between the at least one first peripheral contact and the at least one second peripheral contact. The at least one first peripheral contact, the at least one second peripheral contact, and a surface electrode of the power semiconductor device are configured for surface mounting. The at least one first peripheral contact can be electrically coupled to the power semiconductor device.
1. A power component comprising:
a component substrate;
a power semiconductor device separate from, situated over, and coupled to said component substrate;
a diode coupled to said power semiconductor device through said component substrate;
at least one first peripheral contact and at least one second peripheral contact situated directly on said component substrate, said power semiconductor device situated between said at least one first peripheral contact and said at least one second peripheral contact;
said at least one first peripheral contact and said at least one second peripheral contact being configured for surface mounting.
2. The power component of claim 1 , wherein said at least one first peripheral contact is electrically coupled to said power semiconductor device.
3. The power component of claim 1 , wherein said at least one second peripheral contact is electrically coupled to said power semiconductor device.
4. The power component of claim 1 , wherein said at least one first peripheral contact is electrically floating.
5. The power component of claim 1 , wherein said at least one second peripheral contact is electrically floating.
6. The power component of claim 1 , wherein said component substrate comprises a dielectric layer situated between conductive layers.
7. The power component of claim 1 , wherein said power semiconductor device is coupled to a conductive layer of said component substrate.
8. A power component comprising:
a component substrate;
a power transistor separate from, situated over, and having a collector electrode coupled to said component substrate;
a diode coupled to said power transistor through said component substrate;
at least one first peripheral contact and at least one second peripheral contact situated directly on said component substrate, said power transistor situated between said at least one first peripheral contact and said at least one second peripheral contact;
said at least one first peripheral contact coupled to said collector electrode through said component substrate;
said at least one first peripheral contact and said at least one second peripheral contact being configured for surface mounting.
9. The power component of claim 8 , wherein said at least one first peripheral contact is electrically coupled to said power transistor.
10. The power component of claim 8 , wherein said at least one second peripheral contact is electrically coupled to said power transistor.
11. The power component of claim 8 , wherein said at least one first peripheral contact is electrically floating.
12. The power component of claim 8 , wherein said at least one second peripheral contact is electrically floating.
13. The power component of claim 8 , wherein said component substrate comprises a dielectric layer situated between conductive layers.
14. The power component of claim 8 , wherein said power transistor is coupled to a conductive layer of said component substrate.
15. A power component comprising:
a component substrate;
a power transistor separate from, situated over, and having an emitter electrode coupled to said component substrate;
at least one first peripheral contact and at least one second peripheral contact situated directly on said component substrate, said power transistor situated between said at least one first peripheral contact and said at least one second peripheral contact;
a diode coupled to said power transistor through said component substrate;
said at least one first peripheral contact electrically coupled to said emitter electrode through said component substrate;
said at least one first peripheral contact and said at least one second peripheral contact being configured for surface mounting.
16. The power component of claim 15 , wherein said at least one first peripheral contact is electrically coupled to said power transistor.
17. The power component of claim 15 , wherein said at least one second peripheral contact is electrically coupled to said power transistor.
18. The power component of claim 15 , wherein said at least one first peripheral contact is electrically floating.
19. The power component of claim 15 , wherein said at least one second peripheral contact is electrically floating.
20. The power component of claim 15 , wherein said component substrate comprises a dielectric layer situated between conductive layers.