Composite Power Device with ESD Protection Clamp
There are disclosed herein various implementations of a normally off (enhancement mode) composite power device with an ESD protection clamp. Such a normally off composite power device includes a normally on (depletion mode) power transistor providing a composite drain of the normally off composite power device, and a normally off low voltage (LV) transistor cascoded with the normally on power transistor. The normally off LV transistor provides a composite source and a composite gate of the normally off composite power device. The normally off composite power device also includes the ESD protection clamp coupled between the composite source and the composite gate. The ESD protection clamp is configured to provide electrostatic discharge (ESD) protection for the normally off composite power device.
1 . A normally off composite power device comprising:
a normally on power transistor providing a composite drain of said normally off composite power device;
a normally off low voltage (LV) transistor cascoded with said normally on power transistor, said normally off LV transistor providing a composite source and a composite gate of said normally off composite power device;
an ESD protection clamp coupled between said composite source and said composite gate, said ESD protection clamp configured to provide electrostatic discharge (ESD) protection for said normally off composite power device.
2 . The normally off composite power device of claim 1 , wherein said ESD protection clamp is a discrete diode that is not monolithically integrated with said normally on power transistor and said normally off LV transistor.
3 . The normally off composite power device of claim 1 , wherein said normally off LV transistor and said ESD protection clamp are monolithically integrated.
4 . The normally off composite power device of claim 1 , wherein said normally on power transistor and said normally off LV transistor and said ESD protection clamp are monolithically integrated.
5 . The normally off composite power device of claim 1 , wherein said normally on power transistor and said normally off LV transistor are monolithically integrated.
6 . The normally off composite power device of claim 1 , wherein said normally on power transistor is a high voltage (HV) group III-V transistor.
7 . The normally off composite power device of claim 1 , wherein said normally on power transistor comprises a III-Nitride high electron mobility transistor (HEMT).
8 . The normally off composite power device of claim 1 , wherein said normally off LV transistor comprises a group IV field-effect transistor (FET).
9 . The normally off composite power device of claim 1 , wherein said normally off LV transistor comprises a silicon FET.
10 . The normally off composite power device of claim 1 , wherein said normally off LV transistor and said ESD protection clamp comprise silicon devices.
11 . The normally off composite power device of claim 1 , wherein a drain of said normally off LV transistor is coupled to a source of said normally on power transistor, a source of said normally off LV transistor providing said composite source, and a gate of said normally off LV transistor providing said composite gate, a drain of said normally on power transistor providing said composite drain, a gate of said normally on power transistor being coupled to said source of said normally off LV transistor and to an anode of said ESD protection clamp.
12 . The normally off composite power device of claim 1 , wherein said ESD protection clamp comprises a combination of transistors, and/or diodes and/or resistors that are not monolithically integrated with said normally on power transistor and said normally off LV transistor.
13 . The normally off composite power device of claim 1 , wherein said ESD protection clamp comprises a combination of transistors, and/or diodes and/or resistors that are monolithically integrated with said normally on power transistor and said normally off LV transistor.
14 . The normally off composite power device of claim 1 , wherein said ESD protection clamp comprises at least one diode that is monolithically integrated with said normally on power transistor and said normally off LV transistor.
15 . A monolithically integrated normally off composite power device comprising:
a normally on power transistor providing a composite drain of said normally off composite power device;
a normally off low voltage (LV) transistor cascoded with said normally on power transistor, said normally off LV transistor providing a composite source and a composite gate of said normally off composite power device;
an ESD protection clamp coupled between said composite source and said composite gate, said ESD protection clamp configured to provide electrostatic discharge (ESD) protection for said normally off composite power device;
wherein said normally on power transistor, said normally off LV transistor, and said ESD protection clamp are monolithically integrated.
16 . The monolithically integrated normally off composite power device of claim 15 , wherein said normally on power transistor is a high voltage (HV) group III-V transistor.
17 . The monolithically integrated normally off composite power device of claim 15 , wherein said normally on power transistor comprises a III-Nitride high electron mobility transistor (HEMT).
18 . The monolithically integrated normally off composite power device of claim 15 , wherein said normally off LV transistor comprises a group IV field-effect transistor (FET).
19 . The monolithically integrated normally off composite power device of claim 15 , wherein said normally off LV transistor comprises a silicon FET.
20 . The monolithically integrated normally off composite power device of claim 15 , wherein said normally off LV transistor and said ESD protection clamp comprise silicon devices.