Robust Fused Transistor
According to an exemplary implementation, a transistor includes a plurality of drain fingers interdigitated with a plurality of source fingers. The transistor further includes a gate configured to control current conduction between the plurality of drain fingers and the plurality of source fingers. Additionally, the transistor includes a plurality of drain fuses, each being configured to electrically disconnect a drain finger of the plurality of drain fingers from remaining ones of the plurality of drain fingers. At least one of the plurality of drain fuses can electrically couple the drain finger to a common drain pad. The transistor may further include a plurality of source fuses, each being configured to electrically disconnect a source finger of the plurality of source fingers from remaining ones of the plurality of source fingers.
1 . A transistor comprising:
a plurality of drain fingers interdigitated with a plurality of source fingers;
a gate configured to control current conduction between said plurality of drain fingers and said plurality of source fingers;
a plurality of drain fuses, each being configured to electrically disconnect a drain finger of said plurality of drain fingers from remaining ones of said plurality of drain fingers.
2 . The transistor of claim I, wherein at least one of said plurality of drain fuses electrically couples said drain finger to a common drain pad.
3 . The transistor of claim 1 comprising a plurality of source fuses, each being configured to electrically disconnect a source finger of said plurality of source fingers from remaining ones of said plurality of source fingers.
4 . The transistor of claim 1 comprising a plurality of source fuses, each electrically coupling a source finger of said plurality of source fingers to a common source pad.
5 . The transistor of claim 1 , wherein said transistor is a high-electron-mobility transistor (HEMT).
6 . The transistor of claim 1 , wherein said transistor is a gallium nitride (GaN) transistor.
7 . The transistor of claim 1 , wherein said transistor is a group III-V transistor.
8 . A transistor comprising:
a plurality of drain fingers interdigitated with a plurality of source fingers;
a plurality of gate fingers configured to control current conduction between said plurality of drain fingers and said plurality of source fingers;
a plurality of gate fuses, each being configured to electrically disconnect a gate finger of said plurality of gate fingers from remaining ones of said plurality of gate fingers.
9 . The transistor of claim 8 comprising a plurality of drain fuses, each being configured to electrically disconnect a drain finger of said plurality of drain fingers from remaining ones of said plurality of drain fingers.
10 . The transistor of claim 8 comprising a plurality of source fuses, each being configured to electrically disconnect a source finger of said plurality of source fingers from remaining ones of said plurality of source fingers.
11 . The transistor of claim 8 , wherein said transistor is a high-electron-mobility transistor (HEMT).
12 . The transistor of claim 8 , wherein said transistor is a gallium nitride (GaN) transistor.
13 . The transistor of claim 8 , wherein at least one of said plurality of gate fuses is electrically coupling said gate finger to a common gate pad.
14 . The transistor of claim 8 , wherein said plurality of gate fingers are each electrically coupled to and situated between first and second common gate pad portions.
15 . The transistor of claim 8 , wherein said transistor is a group III-V transistor.
16 . A transistor comprising:
a plurality of drain fingers interdigitated with a plurality of source fingers;
a gate configured to control current conduction between said plurality of drain fingers and said plurality of source fingers;
a plurality of drain fuses, each electrically coupling a drain finger of said plurality of drain fingers to a common drain pad.
17 . The transistor of claim 16 comprising a plurality of source fuses, each electrically coupling a source finger of said plurality of source fingers to a common source pad.
18 . The transistor of claim 16 , wherein said transistor is a high-electron-mobility transistor (HEMT).
19 . The transistor of claim 16 , wherein said transistor is a gallium nitride (GaN) transistor.
20 . The transistor of claim 16 , wherein said transistor is a group III-V transistor.