Integrated III-nitride and silicon device
A III-nitride device that includes a silicon body having formed therein an integrated circuit and a III-nitride device formed over a surface of the silicon body.
1. An integrated semiconductor device comprising:
a silicon device situated in a silicon body;
said silicon body comprising an upper lateral surface that contacts a lower lateral surface of a III-nitride body;
a III-nitride device situated over said III-nitride body;
said silicon device being situated in a different plane relative to said III-nitride device;
said silicon device being coupled to said III-nitride device;
a first conductive via coupled to said silicon device and second conductive via coupled to said III-nitride device,
wherein a portion of the upper lateral surface of said silicon body is not covered by said III-nitride body, and
wherein said silicon device is situated directly underneath said portion of the upper lateral surface of said silicon body.
2. The integrated semiconductor device of claim 1 wherein an insulation body is situated over said silicon body and over said III-nitride body, and wherein said at least one via is situated in said insulation body.
3. The integrated semiconductor device of claim 1 wherein said first conductive via couples said silicon device to a gate electrode of said III-nitride device.
4. The integrated semiconductor device of claim 1 wherein said silicon device is an IC device, and wherein said IC device supplies drive signals to a gate electrode of said III-nitride device by said first conductive via.
5. The integrated semiconductor device of claim 1 wherein said silicon device is situated in said different plane relative to a gate electrode of said III-nitride device, and wherein said first conductive via couples said silicon device to said gate electrode of said III-nitride device.
6. The integrated semiconductor device of claim 4 wherein said IC device is situated in said different plane relative to said gate electrode of said III-nitride device, and wherein said first conductive via supplies said driver signals to said gate electrode of said III-nitride device.
7. The integrated semiconductor device of claim 1 , wherein said III-nitride device includes a III-nitride heterojunction comprising a first III-nitride layer of one band gap and a second III-nitride layer of another band gap formed over said first III-nitride layer.
8. The integrated semiconductor device of claim 7 , wherein said III-nitride body includes a buffer layer interposed between said III-nitride heterojunction and said silicon body.
9. The integrated semiconductor device of claim 1 wherein said silicon device is situated in said different plane relative to power electrodes of said III-nitride device.
10. The integrated semiconductor device of claim 4 wherein said IC device is situated in said different plane relative to power electrodes of said III-nitride device.
11. The integrated semiconductor device of claim 1 wherein said silicon body includes an epitaxially formed portion.
12. The integrated semiconductor device of claim 1 wherein said III-nitride device is a power III-nitride device and said silicon device is an IC device for driving said power III-nitride device.
13. The integrated semiconductor device of claim 1 wherein a conductor disposed within said first via connects an electrode of said III-nitride device to said silicon device.
14. The integrated semiconductor device of claim 1 , wherein said III-nitride device is a high-electron-mobility transistor.
15. The integrated semiconductor device of claim 1 , further comprising an insulation body formed on the silicon body and surrounding the III-nitride body and III-nitride device, said insulation body comprising a lower surface directly contacting the upper lateral surface of the silicon body and an upper surface opposite the lower surface, wherein said upper surface of the insulation body extends along a single plane, and wherein said first conductive via and said second conductive via each comprise an upper surface that is coplanar with said upper surface of the insulation body.