Semiconductor package for III-nitride transistor stacked with diode
View Patent ↗One exemplary disclosed embodiment comprises a two-terminal stacked-die package including a diode, such as a silicon diode, stacked atop a III-nitride transistor, such that a cathode of the diode resides on and is electrically coupled to a source of the III-nitride transistor. A first terminal of the package is coupled to a drain of the III-nitride transistor, and a second terminal of the package is coupled to an anode of the diode. In this manner, devices such as cascoded rectifiers may be packaged in a stacked-die form, resulting in reduced parasitic inductance and resistance, improved thermal dissipation, smaller form factor, and lower manufacturing cost compared to conventional packages.
1. A two-terminal semiconductor package comprising:
a diode;
a III-nitride transistor;
a first terminal of said package coupled to a drain of said III-nitride transistor;
a second terminal of said package coupled to an anode of said diode;
a cathodc of said diode mechanically and electrically coupled to a source of said III-nitride transistor;
wherein said first terminal and said second terminal are coupled respectively to a first lead and a second lead of said semiconductor package;
a single conductive connector mechanically connected to said second lead, a gate of said III-nitride transistor, and said anode of said diode.
2. The semiconductor package of claim 1 , wherein said gate of said III-nitride transistor is coupled to said anode of said diode, thereby forming a cascoded switch comprising said III-nitride transistor and said diode.
3. The semiconductor package of claim 2 , wherein said a single conductive connector comprises a ribbon.
4. The semiconductor package of claim 2 , wherein said a single conductive connector comprises a clip.
5. The semiconductor package of claim 2 , wherein a said single connector comprises a wirebond.
6. The semiconductor package of claim 1 , wherein said diode is a silicon diode.
7. The semiconductor package of claim 1 , wherein said III-nitride transistor is selected from the group consisting of a GaN FET and a GaN HEMT.
8. The semiconductor package of claim 1 , wherein said III-nitride transistor comprises a depletion-mode GaN.
9. A two-terminal semiconductor package comprising:
a diode;
a III-nitride transistor;
a first terminal of said package coupled to a drain of said III-nitride transistor;
a second terminal of said package coupled to an anode of said diode;
a cathode of said diode mechanically and electrically coupled to a source of said III-nitride transistor;
wherein said first terminal and said second terminal are coupled respectively to a first lead and a second lead of said semiconductor package;
a single conductive connector mechanically connected to said second lead, a gate of said III-nitride transistor, and said anode of said diode;
wherein said a single conductive connector comprises a clip.
10. The semiconductor package of claim 9 , wherein said diode is a silicon diode.
11. The semiconductor package of claim 9 , wherein said III-nitride transistor is selected from the group consisting of a GaN FET and a GaN HEMT.
12. The semiconductor package of claim 9 , wherein said III-nitride transistor comprises a depletion-mode GaN.