Semiconductor package with integrated semiconductor devices and passive component
View Patent ↗According to one exemplary embodiment, a semiconductor package includes a substrate having lower and upper surfaces. The semiconductor package further includes at least one passive component coupled to first and second conductive pads on the upper surface of the substrate. The semiconductor package further includes at least one semiconductor device coupled to a first conductive pad on the lower surface of the substrate. The at least one semiconductor device has a first electrode for electrical and mechanical connection to a conductive pad external to the semiconductor package. The at least one semiconductor device can have a second electrode electrically and mechanically coupled to the first conductive pad on the lower surface of the substrate.
1. A semiconductor package comprising:
a substrate having lower and upper surfaces;
first and second conductive pads on said upper surface of said substrate;
at least one passive component coupled to said first and second conductive pads;
third and fourth conductive pads on said lower surface of said substrate;
a first semiconductor device coupled to said third conductive pad;
a second semiconductor device coupled to said fourth conductive pad;
said first semiconductor device having a first electrode for electrical and mechanical connection to a conductive pad external to said semiconductor package using a conductive adhesive.
2. The semiconductor package of claim 1 , wherein said second semiconductor device has a first electrode for electrical and mechanical connection to another conductive pad external to said semiconductor package.
3. The semiconductor package of claim 2 , wherein said second semiconductor device has a second electrode electrically and mechanically coupled to said fourth conductive pad.
4. The semiconductor package of claim 1 , wherein said first semiconductor device has a second electrode electrically and mechanically coupled to said third conductive pad.
5. The semiconductor package of claim 4 , wherein said first semiconductor device has a third electrode situated adjacent to said first electrode.
6. The semiconductor package of claim 4 , wherein said first and second electrodes of said first semiconductor device are situated on opposing surfaces of said first semiconductor device.
7. The semiconductor package of claim 1 further comprising an IC die situated on said upper surface of said substrate and having a plurality of input/output electrodes.
8. The semiconductor package of claim 7 , wherein each of said plurality of input/output electrodes is electrically and mechanically coupled to one of a plurality of conductive pads on said upper surface of said substrate.
9. The semiconductor package of claim 1 , wherein said at least one passive component is electrically and mechanically coupled to each of said first and second conductive pads by a conductive adhesive.
10. The semiconductor package of claim 1 further comprising a metallic plate situated on said upper surface of said substrate.
11. A semiconductor package comprising:
a substrate having lower and upper surfaces;
first and second conductive pads on said upper surface of said substrate;
at least one passive component coupled to said first and second conductive pads;
a third conductive pad on said lower surface of said substrate;
a first semiconductor device coupled to said third conductive pad;
a second semiconductor device;
said first semiconductor device having a first electrode for electrical and mechanical connection to an external conductive pad using a conductive adhesive.
12. The semiconductor package of claim 11 , wherein said second semiconductor device has a first electrode for electrical and mechanical connection to another external conductive pad.
13. The semiconductor package of claim 12 , further comprising a fourth conductive pad on said lower surface of said substrate, wherein said second semiconductor device has a second electrode electrically and mechanically coupled to said fourth conductive pad.
14. The semiconductor package of claim 11 , wherein said first semiconductor device has a second electrode electrically and mechanically coupled to said third conductive pad.
15. The semiconductor package of claim 14 , wherein said first semiconductor device has a third electrode situated adjacent to said first electrode.
16. The semiconductor package of claim 14 , wherein said first and second electrodes of said first semiconductor device are situated on opposing surfaces of said first semiconductor device.
17. The semiconductor package of claim 14 further comprising a metallic plate situated on said upper surface of said substrate.
18. The semiconductor package of claim 11 , further comprising an IC die situated on said upper surface of said substrate and having a plurality of input/output electrodes.
19. The semiconductor package of claim 18 , wherein each of said plurality of input/output electrodes is electrically and mechanically coupled to one of a plurality of conductive pads on said upper surface of said substrate.
20. The semiconductor package of claim 11 , wherein said at least one passive component is electrically and mechanically coupled to each of said first and second conductive pads by a conductive adhesive.