Group III-V Voltage Converter with Monolithically Integrated Level Shifter, High Side Driver, and High Side Power Switch
There are disclosed herein various implementations of a monolithically integrated high side block. Such a monolithically integrated high side block includes a level shifter, a high side driver coupled to the level shifter, and a high side power switch coupled to the high side driver. The high side power switch is monolithically integrated with the high side driver and the level shifter on a common die. Each of the level shifter, the high side driver, and the high side power switch includes at least one group III-V device.
1 . A monolithically integrated high side block comprising:
a level shifter;
a high side driver coupled to said level shifter;
a high side power switch coupled to said high side driver;
said high side power switch being monolithically integrated with said high side driver and said level shifter;
each of said level shifter, said high side driver, and said high side power switch comprising at least one group III-V device.
2 . The monolithically integrated high side block of claim 1 , wherein said at least one group III-V device of said high side power switch is a group III-V high electron mobility transistor (HEMT).
3 . The monolithically integrated high side block of claim 1 , wherein said at least one group III-V device of said high side power switch is a III-Nitride HEMT.
4 . The monolithically integrated high side block of claim 1 , wherein said at least one group III-V device of said high side power switch is a composite transistor comprising a group III-V HEMT cascoded with a group IV transistor.
5 . The monolithically integrated high side block of claim 1 , wherein said at least one group III-V device of said high side power switch is a composite transistor comprising a III-Nitride HEMT cascoded with a silicon field-effect transistor (FET).
6 . The monolithically integrated high side block of claim 1 , wherein said at least one group III-V device of said high side driver and said at least one group III-V device of said level shifter comprise a group III-V HEMT.
7 . The monolithically integrated high side block of claim 1 , wherein said at least one group III-V device of said high side driver and said at least one group III-V device of said level shifter comprise a composite transistor including a group III-V HEMT cascoded with a group IV transistor.
8 . The monolithically integrated high side block of claim 1 , wherein said at least one group III-V device of said high side driver and said at least one group III-V device of said level shifter comprise a III-Nitride HEMT.
9 . The monolithically integrated high side block of claim 1 , wherein said at least one group III-V device of said high side driver and said at least one group III-V device of said level shifter comprise a composite transistor including a III-Nitride HEMT cascoded with a silicon FET.
10 . The monolithically integrated high side block of claim 1 , wherein said at least one group III-V device comprises a group III-V HEMT.
11 . A voltage converter comprising:
a monolithically integrated high side block comprising a level shifter, a high side driver, and a high side power switch;
a low side driver coupled to a low side power switch;
said monolithically integrated high side block being coupled to said low side power switch at a switch node of said voltage converter;
each of said level shifter, said high side driver, and said high side power switch comprising at least one group III-V device.
12 . The voltage converter of claim 11 , wherein at least one of said low side driver and said low side power switch comprises a group III-V device.
13 . The voltage converter of claim 11 , wherein said at least one group III-V device of said high side power switch is a group III-V high electron mobility transistor (HEMT).
14 . The voltage converter of claim 11 , wherein said at least one group III-V device of said high side power switch is a composite transistor comprising a group III-V HEMT cascoded with a group IV transistor.
15 . The voltage converter of claim 11 , wherein said at least one group III-V device of said high side power switch is a III-Nitride HEMT.
16 . The voltage converter of claim 11 , wherein said at least one group III-V device of said high side power switch is a composite transistor comprising a III-Nitride HEMT cascoded with a silicon field-effect transistor (FET).
17 . The voltage converter of claim 11 , wherein said at least one group III-V device of said high side driver and said at least one group III-V device of said level shifter comprise a group III-V HEMT.
18 . The voltage converter of claim 11 , wherein said at least one group III-V device of said high side driver and said at least one group III-V device of said level shifter comprise a composite transistor including a group III-V HEMT cascoded with a group IV transistor.
19 . The voltage converter of claim 11 , wherein said at least one group III-V device of said high side driver and said at least one group III-V device of said level shifter comprise a III-Nitride HEMT.
20 . The voltage converter of claim 11 , wherein at least one of said low side power switch and said low side driver is monolithically integrated with said monolithically integrated high side block.