Dual-gated group III-V merged transistor
View Patent ↗There are disclosed herein various implementations of a group III-V merged cascode transistor. Such a group III-V merged cascode transistor includes a group III-V body disposed over a substrate and configured to produce a two-dimensional electron gas (2DEG). The group III-V body includes a group III-V barrier layer situated over a group III-V channel layer, and a source electrode and a drain electrode. The group III-V merged cascode transistor also includes an enable gate disposed in a recess extending substantially through the group III-V barrier layer, and an operational gate disposed over the group III-V barrier layer, the operational gate not being in physical contact with the enable gate.
1. A group III-V merged cascode transistor comprising:
a group III-V body disposed over a substrate and configured to produce a two-dimensional electron gas (2DEG), said group III-V body including a group III-V barrier layer situated over a group III-V channel layer;
a source electrode and a drain electrode;
an enable gate disposed in a recess extending through said group, III-V barrier layer, said enable gate including a gate electrode in direct contact with said group III-V channel layer; and
an operational gate disposed over said group III-V barrier layer, said operational gate not being in physical contact with said enable gate.
2. The group III-V merged cascode transistor of claim 1 , wherein said enable gate terminates within said group III-V channel layer.
3. The group III-V merged cascode transistor of claim 1 , wherein said enable gate comprises a Schottky gate.
4. The group III-V merged cascode transistor of claim 1 , wherein said operational gate makes Schottky contact with said group III-V barrier layer.
5. The group merged cascode transistor of claim 1 , wherein said group III-V merged cascode transistor is an enhancement mode (normally off) transistor.
6. The group III-V merged cascode transistor of claim 1 , wherein a length of a merged drain/source region of said group merged cascode transistor is less than a gate length of said operational gate.
7. The group III-V merged cascode transistor of claim 1 , wherein a length of a merged drain/source region of said group Ill-V merged cascode transistor is less than or equal to a gate length of said enable gate.
8. A group III-V merged cascode transistor comprising:
a group III-V body disposed over a substrate and configured to produce a two-dimensional electron gas (2DEG), said group III-V body including a group III-V barrier layer situated over a group III-V channel layer;
a source electrode and a drain electrode;
a Schottky enable gate disposed in a recess extending through said group III-V barrier layer, said Schottky enable gate including a gate electrode in direct contact with said group III-V channel layer;
an operational gate disposed over said group III-V barrier layer, said operational gate not being in physical contact with said Schottky enable gate.
9. The group III-V merged cascode transistor of claim 8 , wherein said operational gate makes Schottky contact with said group III-V barrier layer.
10. The group III-V merged cascode transistor of claim 8 , wherein said group III-V merged cascode transistor is an enhancement mode (normally off) transistor.
11. The group III-V merged cascode transistor of claim 8 , wherein a length of a merged drain/source region of said group III-V merged cascode transistor is less than a gate length of said operational gate.
12. The group III-V merged cascode transistor of claim 8 , wherein a length of a merged drain/source region of said group 11 I-V merged cascode transistor is less than or equal to a gate length of said Schottky enable gate.