Packaged assembly for high density power applications

1. A packaged assembly comprising:

a case comprising a first coefficient of thermal expansion and shelves on opposing walls, wherein the case is hermetically sealed, wherein the case further comprises a lid and a bottom plate, and wherein the lid and the bottom plate are made of the same material;

a double-sided dielectric substrate disposed on the shelves of the case and comprising a second coefficient of thermal expansion, wherein the first coefficient of thermal expansion and the second coefficient of thermal expansion are closely matched;

a semiconductor die mounted on a first side of the double-sided dielectric substrate, wherein the semiconductor die comprises a first major surface attached to the first side of the double-sided dielectric substrate, and

a second major surface separated from the case by a gap, wherein the second major surface is parallel to and opposite of the first major surface;

circuit elements mounted on a second side of the double-sided dielectric substrate, wherein

the double-sided dielectric substrate is secured to the shelves of the case by an epoxy, and

the epoxy contacts the double-sided dielectric substrate on the same first side to which the semiconductor die is mounted; and

a plurality of leads rotatably coupled to the double-sided dielectric substrate by a plurality of lead frames, wherein

each of the plurality of leads extends completely through the case and a corresponding one of the plurality of lead frames,

each of the plurality of leads comprises a substantially 90° bend located outside of the case, and

each of the plurality of leads is rotatable relative to the case about an axis of rotation that is perpendicular to a respective surface of the case through which each of the plurality of leads passes.

2. The packaged assembly of claim 1 , wherein the case comprises an aluminum silicon (AlSi) alloy.

3. The packaged assembly of claim 1 , wherein the double-sided dielectric substrate comprises beryllium oxide (BeO) or aluminum oxide (Al 2 O 3 ).

4. The packaged assembly of claim 1 , wherein the semiconductor die on the first side of the double-sided dielectric substrate is coupled to at least one of the circuit elements on the second side of the double-sided dielectric substrate by a through substrate via.

5. The packaged assembly of claim 1 , wherein the double-sided dielectric substrate is a thick film substrate.

6. The packaged assembly of claim 1 , wherein the semiconductor die includes a pulse width modulator.

7. The packaged assembly of claim 1 , wherein the semiconductor die includes at least one vertical conduction semiconductor device.

8. The packaged assembly of claim 1 , wherein a point of load converter circuit is formed on the double-sided dielectric substrate.

9. The packaged assembly of claim 1 , wherein the lid is only in direct contact with the walls of the case.

10. The packaged assembly of claim 1 , wherein the case comprises exactly two shelves.

11. A packaged assembly comprising:

a case comprising an aluminum silicon (AlSi) alloy;

a double-sided substrate disposed on shelves of the case, wherein the double-sided substrate comprises a semiconductor die on a first side of the double-sided substrate coupled to at least one circuit element on a second side of the double-sided substrate; and

a plurality of leads rotatably coupled to the double-sided substrate by a plurality of lead frames allowing each of the plurality of leads to be inverted from a first position to a second position, wherein

each of the plurality of leads passes through the case and a corresponding one of the plurality of lead frames,

each of the plurality of leads comprises a substantially 90° bend located outside of the case,

each of the plurality of leads is rotatable relative to the case about an axis of rotation that is perpendicular to a respective surface of the case through which each of the plurality of leads passes,

in the first position the substantially 90° bend of each of the plurality of leads is directed toward a top surface of the case, and

in the second position the substantially 90° bend of each of the plurality of leads is directed toward a bottom surface of the case, the bottom surface being opposite the top surface.

12. The packaged assembly of claim 11 , wherein the shelves are on opposing walls of the case.

13. The packaged assembly of claim 11 , wherein the double-sided substrate comprises beryllium oxide (BeO) or aluminum oxide (Al 2 O 3 ).

14. The packaged assembly of claim 11 , wherein the semiconductor die on the first side of the double-sided substrate is coupled to the at least one circuit element on the second side of the double-sided substrate by a through substrate via.

15. The packaged assembly of claim 11 , wherein the double-sided substrate is a thick film substrate.

16. The packaged assembly of claim 11 , wherein the semiconductor die includes a pulse width modulator.

17. The packaged assembly of claim 11 , wherein the semiconductor die comprises at least one vertical conduction semiconductor device.

18. The packaged assembly of claim 11 , wherein the double-sided substrate is secured to the case by an epoxy.

19. The packaged assembly of claim 11 , wherein the double-sided substrate is hermetically sealed within the case.

20. A packaged assembly comprising:

a package casing;

a first ledge extending from a first inner sidewall of the package casing;

a second ledge extending from a second inner sidewall of the package casing, the first inner sidewall facing the second inner sidewall; and

a double-sided dielectric substrate supported by the first ledge and the second ledge, wherein the double-sided dielectric substrate comprises a semiconductor die on a first side of the double-sided dielectric substrate and a capacitor/inductor on a second side of the double-sided dielectric substrate; and

a plurality of leads rotatably coupled to the double-sided dielectric substrate by a plurality of lead frames, wherein

each of the plurality of leads extends completely through the package casing and a corresponding one of the plurality of lead frames,

each of the plurality of leads comprises a substantially 90° bend located outside of the package casing, and

each of the plurality of leads is rotatable relative to the package casing about an axis of rotation that is perpendicular to a respective surface of the package casing through which each of the plurality of leads passes.

21. The packaged assembly of claim 20 , wherein a first coefficient of thermal expansion of the package casing and a second coefficient of thermal expansion of the double-sided dielectric substrate are closely matched.

22. The packaged assembly of claim 20 , wherein the package casing is hermetically sealed.