Composite semiconductor device with turn-on prevention control
View Patent ↗There are disclosed herein various implementations of composite III-nitride semiconductor devices having turn-on prevention control. In one exemplary implementation, a normally OFF composite semiconductor device comprises a normally ON III-nitride power transistor and a low voltage (LV) device cascoded with the normally ON III-nitride power transistor to form the normally OFF composite semiconductor device. The LV device is configured to have a noise-resistant threshold voltage to provide the turn-on prevention control for the normally OFF composite semiconductor device by preventing noise current from flowing through a channel of the normally ON III-nitride power transistor in a noisy system.
1. A normally OFF composite semiconductor device for use in a noisy system, said normally OFF composite semiconductor device including a turn-on prevention control, said normally OFF composite semiconductor device comprising:
a normally ON III-nitride power transistor;
a low voltage (LV) group IV device cascoded with said normally ON III-nitride power transistor to form said normally OFF composite semiconductor device, said LV group IV device configured to hold said normally ON III-nitride power transistor OFF when said normally OFF composite semiconductor device is OFF;
said LV group IV device having a low-k gate dielectric with a thickness configured to provide said LV group IV device with a noise-resistant threshold voltage of greater than 1.8V to provide said turn-on prevention control for said normally OFF composite semiconductor device by preventing noise current from flowing through a channel of said normally ON III-nitride power transistor in said noisy system.
2. The normally OFF composite semiconductor device of claim 1 , wherein said normally ON III-nitride power transistor comprises a III-nitride field-effect transistor (III-N FET).
3. The normally OFF composite semiconductor device of claim 1 , wherein said normally ON III-nitride power transistor comprises a III-nitride high electron mobility transistor (III-N HEMT).
4. The normally OFF composite semiconductor device of claim 1 , wherein said LV group IV device comprises a silicon device.
5. The normally OFF composite semiconductor device of claim 1 , wherein said LV group IV device comprises an LV group IV field-effect transistor (LV FET).
6. The normally OFF composite semiconductor device of claim 1 , wherein said LV group IV device is one of an LV metal-oxide-semiconductor FET (LV MOSFET) and an LV metal-insulator-semiconductor FET (LV MISFET).
7. The normally OFF composite semiconductor device of claim 1 , wherein said normally ON III-nitride power transistor and said LV group IV device are monolithically integrated.
8. A composite semiconductor device including a turn-on prevention control for use in a noisy system, said composite semiconductor device comprising:
a III-nitride power transistor;
a low voltage (LV) group IV transistor;
a drain of said LV group IV transistor coupled to a source of said III-nitride power transistor, a source of said LV group IV transistor providing a composite source for said composite semiconductor device, and a gate of said LV group IV transistor providing a composite gate for said composite semiconductor device, a drain of said III-nitride power transistor providing a composite drain for said composite semiconductor device, a gate of said III-nitride power transistor being coupled to said source of said LV group IV transistor, said LV group IV transistor configured to hold said III-nitride power transistor OFF when said composite semiconductor device is OFF;
said LV group IV transistor having a low-k gate dielectric with a thickness configured to provide said LV group IV device with a noise-resistant threshold voltage of greater than 1.8V to provide said turn-on prevention control for said composite semiconductor device by preventing noise current from flowing through a channel of said III-nitride power transistor in said noisy system.
9. The composite semiconductor device of claim 8 , wherein said III-nitride power transistor comprises a III-nitride field-effect transistor (III-N FET).
10. The composite semiconductor device of claim 8 , wherein said III-nitride power transistor comprises a III-nitride high electron mobility transistor (III-N HEMT).
11. The composite semiconductor device of claim 8 , wherein said LV group IV transistor comprises an LV silicon transistor.
12. The composite semiconductor device of claim 8 , wherein said LV group IV transistor is one of an LV metal-oxide-semiconductor FET (LV MOSFET) and an LV metal-insulator-semiconductor FET (LV MISFET).
13. The composite semiconductor device of claim 8 , wherein said III-nitride power transistor and said LV group IV transistor are monolithically integrated.