Power converter package with an integrated output inductor

1. A power semiconductor package comprising:

a conductive carrier including a switch node segment and a power output segment;

an integrated output inductor stacked over said conductive carrier and configured to couple said switch node segment to said power output segment;

a power stage stacked over said integrated output inductor.

2. The power semiconductor package of claim 1 , wherein said integrated output inductor includes a switch node terminal coupled to a first end of a winding in said integrated output inductor, said switch node terminal situated over and coupled to said switch node segment.

3. The power semiconductor package of claim 1 , wherein said integrated output inductor includes a power output terminal coupled to a second end of said winding in said integrated output inductor, said power output terminal situated over and coupled to said power output segment.

4. The power semiconductor package of claim 1 , wherein said power stage is coupled to a switch node terminal of said integrated output inductor by a first wire bond connected to said switch node segment.

5. The power semiconductor package of claim 1 , wherein said power stage is further coupled to a power input terminal of said power semiconductor package by a second wire bond connected to a power input segment of said conductive carrier.

6. The power semiconductor package of claim 1 , wherein said power stage includes at least one group III-V power transistor.

7. The power semiconductor package of claim 1 , wherein said power stage includes at least one GaN power transistor.

8. The power semiconductor package of claim 1 , wherein said power stage is coupled to said integrated output inductor using a die attach material.

9. A power semiconductor package comprising:

a conductive carrier including a switch node segment and a power output segment;

an integrated output inductor stacked over said conductive carrier;

said integrated output inductor having a switch node terminal coupled to a first end of a winding in said integrated output inductor, said switch node terminal situated over and coupled to said switch node segment;

said integrated output inductor having a power output terminal coupled to a second end of said winding in said integrated output inductor, said power output terminal situated over and coupled to said power output segment;

a power stage stacked over said integrated output inductor.

10. The power semiconductor package of claim 9 , wherein said power stage is coupled to a switch node terminal of said integrated output inductor by a first wire bond connected to said switch node segment.

11. The power semiconductor package of claim 9 , wherein said power stage is further coupled to a power input terminal of said power semiconductor package by a second wire bond connected to a power input segment of said conductive carrier.

12. The power semiconductor package of claim 9 , wherein said power stage includes at least one group III-V power transistor.

13. The power semiconductor package of claim 9 , wherein said power stage includes at least one GaN power transistor.

14. The power semiconductor package of claim 9 , wherein said power stage is coupled to said integrated output inductor using a die attach material.

15. A power semiconductor package comprising:

a conductive carrier including a switch node segment and a power output segment;

an integrated output inductor stacked over said conductive carrier and configured to couple said switch node segment to said power output segment;

a power stage stacked over said integrated output inductor;

said power stage being coupled to a switch node terminal of said integrated output inductor by a first wire bond connected to said switch node segment;

said power stage being further coupled to a power input terminal of said power semiconductor package by a second wire bond connected to a power input segment of said conductive carrier.

16. The power semiconductor package of claim 15 , wherein said integrated output inductor includes a switch node terminal coupled to a first end of a winding in said integrated output inductor, said switch node terminal situated over and coupled to said switch node segment.

17. The power semiconductor package of claim 15 , wherein said integrated output inductor includes a power output terminal coupled to a second end of a winding in said integrated output inductor, said power output terminal situated over and coupled to said power output segment.

18. The power semiconductor package of claim 15 , wherein said power stage includes at least one group III-V power transistor.

19. The power semiconductor package of claim 15 , wherein said power stage includes at least one GaN power transistor.

20. The power semiconductor package of claim 15 , wherein said power stage is coupled to said integrated output inductor using a die attach material.