Method for manufacturing flash memory cell by rie slope etching reflowed photoresist pattern
View Patent ↗A method for manufacturing a flash memory cell with a floating gate and a control gate having an increased coupling ratio due to an increase in gate capacitance. The gate size is increased by reducing a groove width in a photoresist pattern used to define the gate region. The groove width is reduced by employing a slope-etching process to form the photoresist pattern.
1. A method comprising:
depositing a first oxide layer over a semiconductor substrate having a device isolation layer;
depositing a first polycrystalline silicon layer over the first oxide layer;
forming a floating gate photoresist pattern over the first polycrystalline silicon layer;
slope etching the photoresist pattern through a photoresist reflow process;
forming a floating gate by etching the first polycrystalline silicon layer and the first oxide layer along the slope etched photoresist pattern to expose the isolation layer;
removing the photoresist pattern; and
forming a control gate by sequentially depositing a second oxide layer and a second polycrystalline silicon layer over the semiconductor substrate and the floating gate.
2. The method of claim 1 , wherein the slope etching comprises a reactive ion etching (RIE) process.
3. The method of claim 2 , wherein the reactive ion etching is performed under a pressure of approximately 60 mTorr to 80 mTorr.
4. The method of claim 2 , wherein the reactive ion etching is performed using a power input between approximately 50 W and 100 W.
5. The method of claim 1 , wherein said slope etching creates a sloped sidewall in a groove in the etched photoresist pattern.
6. The method of claim 1 , wherein said slope etching process causes a decrease in the width of a groove in the photoresist pattern.
7. The method of claim 1 , wherein said slope etching process creates a groove width in the photoresist pattern smaller than a critical dimension of the semiconductor device fabrication process.