Light emitting diodes (LEDs) with improved light extraction by roughening
Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
1. A light-emitting diode (LED) device, comprising:
a conductive substrate;
a p-doped layer disposed above the conductive substrate;
an active layer for emitting light disposed above the p-doped layer; and
an n-doped layer disposed above the active layer, wherein a surface of the n-doped layer has been roughened via a photo-electrochemical (PEC) oxidation and etching method, the roughened surface having a non-ordered texture, wherein a dimension of a structure on the roughened surface is approximately one half of the wavelength (λ/2) of the emitted light for enhanced light extraction from the LED device.
2. The LED device of claim 1 , further comprising a conductive contact disposed above the n-doped layer, wherein the contact is used as a mask during the PEC oxidation and etching method.
3. The LED device of claim 1 , wherein the root-mean-square (RMS) value of the surface roughness ranges from 0.05 μm to 2 μm.
4. The LED device of claim 1 , wherein the effective refractive index of the roughened surface is approximately 2.0 to 2.5.
5. The LED device of claim 1 , further comprising a reflective layer disposed between the conductive substrate and the p-doped layer.
6. The LED device of claim 5 , wherein the reflective layer comprises at least one of Ni, Au, Pt, Cr, Ti, Pd, and Ag.