Method of making a molecule-surface interface
This invention is generally related to a method of making a molecule-surface interface comprising at least one surface comprising at least one material and at least one organic group wherein the organic group is adjoined to the surface and the method comprises contacting at least one organic group precursor with at least one surface wherein the organic group precursor is capable of reacting with the surface in a manner sufficient to adjoin the organic group and the surface.
1. A method of making a molecule-surface interface comprising at least one surface and at least one organic group;
wherein the at least one surface comprises at least one material;
wherein the at least one surface is at least partially hydride-passivated; and
wherein the at least one organic group is adjoined to the at least one surface;
wherein the method comprises:
generating at least one diazonium salt in situ;
wherein the at least one diazonium salt comprises at least one organic group precursor;
contacting the least one diazonium salt with the at least one surface; and
reacting the at least one diazonium salt with the at least one surface;
wherein reacting comprises bonding the at least one organic group to the at least one surface in the absence of an externally applied potential.
2. The method according to claim 1 wherein the at least one surface has a shape selected from the group consisting of flat, curved, corrugated and any combination thereof.
3. The method according to claim 1 wherein the at least one material comprising the at least one surface is selected from the group consisting of germanium, tin, boron, carbon, lead, gallium, arsenic, silicon, palladium, platinum, nickel, gold, copper, and any combination thereof.
4. The method according to claim 3 wherein the at least one material comprising the at least one surface is selected from the group consisting of silicon, gallium arsenide and palladium.
5. The method according to claim 1 wherein the at least one material has a form selected from the group consisting of single crystal, crystalline, amorphous, nanocrystalline, polycrystalline, and any combination thereof.
6. The method according to claim 1 wherein the at least one material is selected from the group consisting of palladium, gallium arsenide, p-type doped single-crystal silicon, intrinsic single-crystal silicon, n-type doped single-crystal silicon and n-type polycrystalline silicon.
7. The method according to claim 1 wherein the step of contacting with the surface is carried out in a solvent selected from the group consisting of acetonitrile, methylene chloride, chloroform, ether, sulfolane, water and any combination thereof.
8. The method according to claim 7 wherein the step of contacting with the surface is carried out in acetonitrile.
9. The method according to claim 1 wherein the at least one diazonium salt is of the general formula (I):
wherein R 1 is selected from the group consisting of alkyl, alkenyl, aryl, and alkynyl;
wherein A is selected from the group consisting of H, alkyl, alkenyl, aryl, alkynyl and any combination thereof;
wherein Y x is at least one substituent selected from the group consisting of nitro, amino, acyl, heteroatoms, alkyl, alkenyl, aryl, alkynl, fluoro, diazonium, diazo, allyl, thiol, thioacetate, isonitrile, nitrile and H; and
wherein X − is selected from the group consisting of tetrafluoroborate, tetrakis(pentafluorophenyl)borate, hexafluorophosphate, chloride, bromide, iodide and hydrogensulfate (HSO 4 − ).
10. The method according to claim 9 wherein X − is tetrafluoroborate.
11. The method according to claim 9 wherein A is aryl;
wherein A is further substituted with at least one substituent selected from the group consisting of nitro, amino, acyl, heteroatoms, alkyl, alkenyl, aryl, alkynyl, fluoro, diazonium, diazo, allyl, thiol, thioacetate, isonitrile, nitrile and H.
12. The method according to claim 11 wherein the at least one diazonium salt is selected from the group consisting of
13. The method according to claim 1 wherein the generating step comprises adding at least one reagent to at least one chemical species to provide the at least one diazonium salt.
14. The method according to claim 1 wherein the at least one organic group is bonded to the at least one surface via a covalent bond.
15. The method according to claim 1 wherein at least one ordered layer of organic groups is assembled on the at least one surface.
16. The method according to claim 1 wherein multiple layers of organic groups are assembled on the at least one surface.
17. The method according to claim 1 wherein the at least one organic group is arranged such that a long axis of the at least one organic group makes an angle to the surface between about 90° and about 45°.
18. A method of making a molecule-surface interface comprising at least one surface and at least one organic group;
wherein the at least one surface comprises at least one material selected from the group consisting of silicon, gallium arsenide, palladium and any combination thereof;
wherein the at least one surface is at least partially hydride-passivated; and
wherein the at least one organic group is covalently bonded to the at least one surface;
wherein the method comprises:
generating at least one diazonium salt in situ;
wherein the at least one diazonium salt comprises at least one organic group precursor;
contacting at least one diazonium salt with the at least one surface; and
reacting the at least one diazonium salt with the at least one surface;
wherein reacting comprises bonding the at least one organic group to the at least one surface in the absence of an externally applied potential.