Granted Patent B2

US 7,608,513 · App. 11/626,928 · Granted Oct 27, 2009

Abstract

Claims (48)

1. A method of fabricating a semiconductor device, comprising the steps of:

providing a semiconductor having a substrate region of a first conductivity type and first impurity concentration, extending to a surface of the semiconductor;

impurity doping a first region of the first conductivity type and a second dopant concentration in a first portion of the substrate region to form a first doped well extending substantially to the surface;

impurity doping a second region of a second, opposite conductivity type and a third dopant concentration within a second portion of the substrate region different from the first portion of the substrate region, thereby forming a second doped well extending substantially to the surface;

forming a first gate dielectric surmounted by a first gate, at least partially overlying the first region or the substrate region or both;

forming a second gate dielectric surmounted by a second gate, substantially overlying the second region and spaced apart from the first gate;

impurity doping a third region of the second conductivity type and a fourth impurity concentration in the substrate region, adapted when biased to form a depletion region at least partly in the substrate region or in a combination of the substrate region and the first region;

forming a bias contact to a part of the depletion region; and

electrically coupling the bias contact to the second gate.

2. The method of claim 1 , wherein the step of impurity doping a third region, comprises, forming as the third region, a lateral isolation wall of the second conductivity type at least partly encompassing the substrate region.

3. The method of claim 1 , wherein the step of impurity doping a third region, comprises, forming as the third region, a drain region.

4. The method of claim 1 , wherein the depletion region has a width when biased and the bias contact is located at a distance from the third region of about 50-75% of the width of the depletion region.

5. The method of claim 1 , wherein the fourth dopant concentration is at least ten times the first dopant concentration.

6. The method of claim 1 , wherein the step of forming a bias contact, comprises, locating the bias contact within the depletion region so that when the depletion region is formed by biasing the third region, the voltage at the bias contact is in the range of about 50-75% of the maximum operating voltage of the device.

7. The method of claim 1 wherein:

the step of impurity doping the second region, comprises, forming the second region spaced apart from the first region by a portion of the substrate region so that a PN junction formed between the second region and the substrate region extends substantially to the surface; and

the step of forming a first gate comprises forming the first gate substantially overlying a part of the substrate region.

8. The method of claim 1 wherein:

the step of impurity doping a second region comprises, forming the second region substantially in contact with the first region so that a PN junction therebetween extends substantially to the surface; and

the step of forming a first gate comprises, forming the first gate mostly overlying the first region.

9. The method of claim 7 , wherein the bias contact is located within the depletion region, so that an electric field at a surface of the portion of the substrate region is reduced.

10. A method of fabricating a semiconductor device, comprising the steps of:

providing a semiconductor substrate of a first conductivity type and first dopant concentration and having a surface;

forming a first well of the first conductivity type and second dopant concentration in the substrate;

forming a second well of a second, opposite, conductivity type and third dopant concentration in the substrate, wherein the second well is separated from or in contact with the first well and forms a PN junction with the first well or the substrate, which PN junction extends substantially to the surface;

forming a third region of the second conductivity type and a fourth dopant concentration in the substrate, extending substantially to the surface and laterally separated from the first well, and adapted when biased to form a space charge region at least partly in the substrate or the first well or in a combination thereof;

forming a first gate overlying a part of the first well or a part of the substrate between the first and second wells or both;

forming a second gate spaced apart from the first gate and overlying at least a part of the second well; and

forming an ohmic contact to the substrate within the space charge region and electrically coupled to the second gate.

11. The method of claim 10 , wherein the ohmic contact to the substrate within the space-charge region is separated from the third region by a distance such that the ohmic contact sees a voltage when the third region is biased of about 50-75% of the maximum rated operating voltage of the device.

12. The method of claim 10 , further comprising:

forming a source of the second conductivity type in the first well; and

forming a drain region of the second conductivity type in the second well.

13. The method of claim 10 , wherein the third region is a lateral isolation wall.

14. The method of claim 10 , wherein a silicide blocking layer overlies the surface between the first and second gates and a voltage applied to the second gate by the ohmic contact to the substrate reduces, during operation, a maximum electric field at the surface underlying the silicide blocking layer compared to the maximum electric field underlying the silicide blocking layer when no second gate is present.

15. The method of claim 14 , wherein one lateral edge of the second gate and one lateral edge of the drain are substantially aligned, and one lateral edge of the first gate and one lateral edge of the source are substantially aligned.

16. The method of claim 10 , wherein the fourth dopant concentration is at least ten times larger than the first dopant concentration.

17. A method of fabricating a laterally diffused metal oxide semiconductor (LDMOS) device, comprising the steps of:

providing a semiconductor substrate of a first conductivity type and first concentration, having a principal surface;

forming a source region of a second, opposite, conductivity type extending to the principal surface;

forming a drain region of a second, opposite, conductivity type extending to the principal surface and spaced apart from the source region;

forming a first gate above a first portion of the principal surface proximate the source region, wherein the first gate is adapted to receive a control signal;

forming a second gate above the principal surface proximate the drain region and spaced apart from the first gate, wherein the second gate is adapted to receive a bias voltage Vg 2 ;

forming a further region in the substrate, wherein the further region is of the second conductivity type and further dopant concentration greater than the first concentration, and is adapted to form a space charge region in the substrate when the further region receives a voltage Vbias; and

forming a body contact within the space charge region and spaced a predetermined distance from the further region, wherein the body contact is coupled to the second gate for providing voltage Vg 2 to the second gate, and wherein the space charge region acts as a voltage divider so that Vg 2 provided by the body contact is a predetermined fraction of Vbias applied to the further region.

18. The method of claim 17 , wherein the predetermined fraction is in a range of 50 percent to 75 percent of Vbias.

19. The method of claim 18 , wherein the predetermined fraction is in a range of about 55 percent to about 65 percent of Vbias.

20. The method of claim 17 , wherein the further region is part of a lateral isolation wall, and the further dopant concentration is greater than 10 times the first dopant concentration.

Assignments (15)