Coated substrates and methods for their preparation
View Patent ↗Coated substrates containing at least one barrier layer comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm 3 and at least one barrier layer selected from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride.
1. A coated substrate, consisting of:
a substrate;
a first barrier layer on the substrate, wherein the first barrier layer comprises hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm 3 ; and
at least two alternating buffer and barrier layers on the first barrier layer, wherein each alternating buffer layer comprises hydrogenated silicon oxycarbide having a density less than 1.6 g/cm 3 , and each alternating barrier layer is independently selected from hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm 3 , aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride, provided at least one alternating barrier layer is selected from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride.
2. The coated substrate according to claim 1 , wherein the coated substrate comprises from 2 to 16 alternating buffer and barrier layers on the first barrier layer.
3. The coated substrate according to claim 1 , wherein the hydrogenated silicon oxycarbide of the first barrier layer and the alternating barrier layers has a density of from 1.7 to 2.5 g/cm 3 .
4. The coated substrate according to claim 1 , wherein the first barrier layer and the alternating buffer and barrier layers each have a thickness of from 0.2 to 10 μm.
5. The coated substrate according to claim 1 , wherein the hydrogenated silicon oxycarbide of the alternating buffer layers has a density of from 1.0 to 1.5 g/cm 3 .
6. A coated substrate, consisting of:
a substrate;
a first buffer layer on the substrate, wherein the first buffer layer comprises hydrogenated silicon oxycarbide having a density less than 1.6 g/cm 3 ; and
at least three alternating barrier and buffer layers on the first buffer layer, wherein each alternating barrier layer is independently selected from hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm 3 , aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride, and each alternating buffer layer comprises hydrogenated silicon oxycarbide having a density less than 1.6 g/cm 3 , provided at least one alternating barrier layer is hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm 3 , and at least one alternating barrier layer is selected from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride.
7. The coated substrate according to claim 6 , wherein the coated substrate comprises from 3 to 10 alternating barrier and buffer layers on the first buffer layer.
8. The coated substrate according to claim 6 , wherein the hydrogenated silicon oxycarbide of the first buffer layer and the alternating buffer layers has a density of from 1.0 to 1.5 g/cm 3 .
9. The coated substrate according to claim 6 , wherein the first buffer layer and the alternating barrier and buffer layers each have a thickness of from 0.2 to 10 μm.
10. The coated substrate according to claim 6 , wherein the hydrogenated silicon oxycarbide of the alternating barrier layers has a density of from 1.7 to 2.5 g/cm 3 .