Non-aqueous microelectronic cleaning compositions containing fructose
View Patent ↗Back end photoresist strippers and residue compositions are provided by non-aqueous compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise a polar organic solvent, a hydroxylated amine, and as a corrosion inhibitor fructose.
1. A non-aqueous cleaning composition for cleaning photoresist, post etch and ash, sacrificial light absorbing materials or anti-reflective coatings from microelectronic substrates, said cleaning composition comprising:
from about 70 wt % to about 95 wt % of organic polar solvent which is a mixture of N-methyl pyrrolidone and sulfolane, from about 1 wt % to about 15 wt % of an organic hydroxylated amine selected from the group consisting of diethanolamine and 1-amino-2-propanol, a corrosion-inhibiting amount of from about 0.1% to about 15% fructose corrosion inhibitor, and optionally one or more of the following components:
an organic-hydroxyl-containing co-solvent;
a chelating or metal complexing agent;
an other metal corrosion-inhibiting agent; and
a surfactant;
wherein the wt percentages are based on the total weight of the cleaning composition.
2. A process for cleaning photoresist, post etch and ash, sacrificial light absorbing materials or anti-reflective coatings from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist or residue from the substrate, wherein the cleaning composition is a composition of claim 1 .
3. A process according to claim 2 wherein the microelectronic substrate to be cleaned is characterized by the presence of copper metallization.
4. A non-aqueous cleaning composition for cleaning photoresist, post etch and ash, sacrificial light absorbing materials or anti-reflective coatings from microelectronic substrates, said cleaning composition comprising:
from about 70 wt % to about 95 wt % of organic polar solvent which is a mixture of dimethylacetamide and dimethyl sulfoxide, from about 1 wt % to about 15 wt % of an organic hydroxylated amine selected from the group consisting of diethanolamine and 1-amino-2-propanol, a corrosion-inhibiting amount of from about 0.1% to about 15% fructose corrosion inhibitor, and optionally one or more of the following components:
an organic-hydroxyl-containing co-solvent;
a chelating or metal complexing agent;
an other metal corrosion-inhibiting agent; and
a surfactant;
wherein the wt percentages are based on the total weight of the cleaning composition.
5. A process for cleaning photoresist, post etch and ash, sacrificial light absorbing materials or anti-reflective coatings from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist or residue from the substrate, wherein the cleaning composition is a composition of claim 4 .
6. A process according to claim 5 wherein the microelectronic substrate to be cleaned is characterized by the presence of copper metallization.