Electronic component having tin rich deposit layer and the process for depositing the same
The invention relates to an electronic component with Sn rich deposit layer on the part for electric connection, wherein the Sn rich deposit layer is a fine grained Sn rich deposit layer composed of grains with smaller size in the direction perpendicular to the deposit surface than in the direction parallel to the deposit surface. It also relates to a process for plating an electronic component, so as to form a Sn rich deposit layer on the part for electric connection, comprising the steps of: adjusting the composition of tin plating solution in which starter additive and brighter additive are included; moving the electronic component through the tin plating solution, so as to form a fine grained Sn rich deposit layer on the part for electric connection. As compared with the prior art, the invention can validly inhibit the whisker growth with low cost and reliable property.
1. An electronic component with Sn rich deposit layer on a part for electric connection, wherein the Sn rich deposit layer is a fine grained Sn rich deposit layer composed of grains with smaller size in the direction perpendicular to the deposit surface than in the direction parallel to the deposit surface.
2. The electronic component according to claim 1 wherein the size of grains in the direction perpendicular to the deposit surface is not more than 2 μm.
3. The electronic component according to claim 1 wherein the grains substantially take the same orientation in the direction parallel to the deposit surface.
4. The electronic component according to claim 1 wherein the grains are irregular in shape.
5. The electronic component according to claim 1 wherein the thickness of the Sn rich deposit layer is at least 2 μm.
6. The electronic component according to claim 5 wherein the one or more additional deposit layer(s) and the Sn rich deposit layer have different grain structure.
7. The electronic component according to claim 1 wherein one or more additional deposit layer(s) is formed on the Sn rich deposit layer.
8. The electronic component according to claim 1 , wherein the part for electric connection is made by copper or copper alloy.