Dielectric device and method of manufacturing the same
A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, and Cr.
1. A dielectric device comprising:
a first conductor film;
a dielectric film provided on the first conductor film; and
an intermediate region positioned between the first conductor film and the dielectric film, wherein
the intermediate region contains a mixture of an additive that is different from a material of the first conductor film and from a material of the dielectric film, and a dielectric that is same as the material of the dielectric film, and
the additive contains at least one element selected from the group consisting of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe and Cr.
2. The dielectric device according to claim 1 ,
wherein the additive has such a concentration in the intermediate region as to enhance a critical peeling load value of the dielectric film measured by scratching.
3. The dielectric device according to claim 1 ,
wherein the first conductor film is constituted by Ni, Cu, or Al or an alloy mainly composed of any thereof.
4. The dielectric device according to claim 1 ,
wherein the additive contains an oxide of the element.
5. The dielectric device according to claim 1 ,
further comprising a second conductor film provided on the dielectric film;
wherein the first conductor film contains the additive, the element in the first conductor film having a concentration of 10 ppm to 5000 ppm when the element is Si and a concentration of 10 ppm to 3000 ppm when the element is Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, or Cr.
6. The dielectric device according to claim 1 ,
wherein the first conductor film is constituted by Ni and contains the additive, the additive containing Si, Si in the first conductor film having a concentration of 10 ppm to 5000 ppm.
7. The dielectric device according to claim 1 , wherein the dielectric film is an oxide.
8. The dielectric device according to claim 7 ,
wherein the dielectric film has a perovskite structure and contains at least one element selected from the group consisting of Ba, Sr, Ca, Pb, Ti, Zr and Hf.
9. The dielectric device according to claim 1 ,
wherein the first conductor film is a metal foil.
10. The dielectric device according to claim 1 ,
further comprising a base for supporting the first conductor film and the dielectric film.