Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
A Cl 2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl 2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
1 . A barrier metal film production apparatus, comprising:
a chamber accommodating a substrate;
a metallic etched member provided in the chamber at a position opposed to the substrate;
source gas supply means for supplying a source gas containing a halogen into the chamber;
nitrogen-containing gas supply means for supplying a gas containing nitrogen into the chamber;
plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and which converts the atmosphere within the chamber into a plasma to generate a nitrogen-containing gas plasma so that a metal nitride is formed upon reaction between nitrogen and the precursor;
control means which makes a temperature of the substrate lower than a temperature of the plasma generation means to form the metal nitride as a barrier metal film on a surface of the substrate;
rare gas supply means for supplying a rare gas to a site above the surface of the substrate; and
surface treatment plasma generation means for performing a surface treatment which converts the atmosphere within the chamber into a plasma to generate a rare gas plasma so that nitrogen atoms in a superficial layer of the barrier metal film are removed by the rare gas plasma to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.
2 . The barrier metal film production apparatus of claim 1 , further comprising:
oxygen gas supply means for supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and
oxygen plasma generation means which converts the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.
3 . The barrier metal film production apparatus of claim 1 , further comprising:
hydrogen gas supply means for supplying a hydrogen gas into the chamber; and
hydroxyl group plasma generation means which converts the atmosphere within the chamber into a plasma to generate a hydrogen gas plasma so that hydroxyl groups are formed on the oxide layer.
4 . The barrier metal film production apparatus of claim 1 , wherein the source gas containing the halogen is the source gas containing chlorine.
5 . The barrier metal film production apparatus of claim 1 , wherein the gas containing nitrogen is a gas containing ammonia.
6 . The barrier metal film production apparatus of claim 1 , wherein the etched member is made of tantalum, tungsten, titanium or silicon which is a halide-forming metal.
7 . A barrier metal film production method comprising:
supplying a source gas containing a halogen and a nitrogen-containing gas to an interior of a chamber between a substrate and a metallic etched member;
converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and also converting the atmosphere within the chamber into a plasma to generate a nitrogen-containing gas plasma so that a metal nitride is formed upon reaction between nitrogen and the precursor;
making a temperature of the substrate lower than a temperature of plasma generation means to form the metal nitride as a barrier metal film on a surface of the substrate;
supplying a rare gas to a site within the chamber above the surface of the substrate; and
performing a surface treatment which converts the atmosphere within the chamber into a plasma to generate a rare gas plasma so that nitrogen atoms in a superficial layer of the barrier metal film are removed by the rare gas plasma to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.
8 . The barrier metal film production method of claim 7 , further comprising:
supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and
converting the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.
9 . The barrier metal film production method of claim 7 , further comprising:
supplying a hydrogen gas into the chamber; and
converting the atmosphere within the chamber into a plasma to generate a hydrogen gas plasma so that hydroxyl groups are formed on the oxide layer.
10 . The barrier metal film production method of claim 7 , wherein the source gas containing the halogen is the source gas containing chlorine.
11 . The barrier metal film production method of claim 7 , wherein the gas containing nitrogen is a gas containing ammonia.
12 . The barrier metal film production method of claim 7 , wherein the etched member is made of tantalum, tungsten, titanium or silicon which is a halide-forming metal.