Granted Patent B2

US 7,432,193 · App. 11/640,916 · Granted Oct 7, 2008

Abstract

Claims (15)

1. A method for forming a thin film of a semiconductor device, comprising the steps of:

forming a TaN film on a semiconductor substrate by employing an atomic layer deposition process; and

converting a part of the TaN film into a Ta film by reacting the TaN film with NO 2 .

2. The method of claim 1 , wherein the NO 2 is formed by reacting NH 3 with O 2 .

3. The method of claim 1 , wherein the TaN film has a thickness of about 7 nm or less.

4. The method of claim 1 , wherein the Ta film has a thickness of about a half of that of the TaN film.

5. A method for forming a metal line of a semiconductor device, comprising:

forming an interlayer insulating film on a semiconductor substrate;

forming a trench on the interlayer insulating film;

forming a TaN film on the semiconductor substrate, the TaN film being formed by employing an atomic layer deposition (ALD) process;

converting a part of TaN film into a Ta film by reacting the TaN film with NO 2 ; and

forming a metal line on the Ta film.

6. The method of claim 5 , wherein the NO 2 is formed by reacting NH 3 with O 2 .

7. The method of claim 5 , wherein the TaN film has a thickness of about 7 nm or less.

8. The method of claim 5 , wherein the Ta film has a thickness of about a half of that of the TaN film.

Assignments (6)