Sulfonamide compound, polymer compound, resist material and pattern formation method
View Patent ↗A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R 5 and R 6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group, a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.
1. A polymer compound comprising a unit represented by a general formula of the following Chemical Formula 2 and having a weight-average molecular weight of 1,000 or more and 500,000 or less:
wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and at least one of R 5 and R 6 is a protecting group released by an acid.
2. A resist material comprising a base polymer containing a polymer compound including a unit represented by a general formula of the following Chemical Formula 3:
wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and at least one of R 5 and R 6 is a protecting group released by an acid.
3. The resist material of claim 2 ,
wherein said protecting group released by an acid is an acetal group.
4. The resist material of claim 3 ,
wherein said acetal group is an alkoxyethyl group or an alkoxymethyl group.
5. The resist material of claim 4 ,
wherein said alkoxyethyl group is an adamantyloxyethyl group, a t-butyloxyethyl group, an ethoxyethyl group or a methoxyethyl group, and
said alkoxymethyl group is an adamantyloxymethyl group, a t-butyloxymethyl group, an ethoxymethyl group or a methoxymethyl group.
6. The resist material of claim 2 , further comprising an acid generator for generating an acid through irradiation with light.
7. The resist material of claim 6 , further comprising a dissolution inhibitor for inhibiting dissolution of said base polymer.