Intercalated superlattice compositions and related methods for modulating dielectric property

1. A thin film transistor device comprising:

a substrate;

a dielectric material deposited on the substrate; and

a semiconductor material deposited on the dielectric material;

wherein the dielectric material comprises a multilayer composition, the multilayer composition comprising periodically alternating layers, the alternating layers comprising (a) one or more layers comprising a silyl or siloxane moiety, (b) one or more layers comprising a π-polarizable moiety, and (c) one or more layers comprising an inorganic moiety comprising one or more main group metals and/or transition metals.

2. The device of claim 1 , wherein at least some of the alternating layers of the dielectric material are coupled to an adjacent layer by a coupling layer comprising a siloxane matrix.

3. The device of claim 1 , wherein the silyl moiety has the formula selected from —Si(CH2) n Si—, —Si(CHF) n Si—, and —Si(CF2) n Si—, wherein n is 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10.

4. The device of claim 1 , wherein the π-polarizable moiety comprises a stilbazolium group.

5. The device of claim 1 , wherein the one or more main group metals and/or transition metals are independently selected from In, Ga, Zr, Ti, Hf, and Ta.

6. The device of claim 1 , wherein the dielectric material comprises self-assembled monolayers of the silyl moiety.

7. The device of claim 1 , wherein the dielectric material comprises self-assembled monolayers of the π-polarizable moiety.

8. The device of claim 2 , wherein at least some of the alternating layers of the dielectric material are coupled to one another or the siloxane matrix via a condensation reaction.

9. The device of claim 2 , wherein at least some of the alternating layers of the dielectric material are coupled to one another or the siloxane matrix via chemisorption.

10. The device of claim 1 , wherein both the substrate and the semiconductor material are transparent.