Vgs replication apparatus, method, and system
View Patent ↗A gate-to-source voltage (Vgs) replication circuit includes a diode-connected NMOS transistor coupled to a current source to draw a drain-to-source current therethrough. The generated Vgs is imposed across a source-to-gate junction of a PMOS transistor. A second PMOS transistor is coupled in series with the first PMOS transistor such that the source-to-gate voltage (Vsg) of the second PMOS transistor replicates the Vgs of the NMOS circuit. The second PMOS transistor is coupled as a source follower to bias other NMOS transistors.
1. A circuit comprising:
a first NMOS transistor having a gate node and drain node coupled to a power supply node;
a current source coupled to a source node of the first NMOS transistor to provide a drain-to-source current (Ids) through the first NMOS transistor, and to produce a first gate-to-source voltage (Vgs) between the gate node and source node of the first NMOS transistor; and
a plurality of stacked PMOS transistors coupled such that a source-to-gate voltage (Vsg) of at least one of the plurality of stacked PMOS transistors matches the Vgs of the first NMOS transistor.
2. The circuit of claim 1 wherein the plurality of stacked PMOS transistors comprises:
a first PMOS transistor having a source node coupled to the gate node of the first NMOS transistor, and a gate node coupled to the source node of the first NMOS transistor; and
a second PMOS transistor having a source node coupled to the drain node of the first PMOS transistor, and a source node coupled to a reference node.
3. The circuit of claim 2 further comprising a second NMOS transistor biased by a Vsg of the second PMOS transistor.
4. The circuit of claim 3 further comprising a low pass filter coupled between the second NMOS transistor and the second PMOS transistor.
5. The circuit of claim 2 further comprising a mixer circuit having a plurality of NMOS transistors biased by a Vsg of the second PMOS transistor.
6. The circuit of claim 5 further comprising at least one low pass filter coupled between the plurality of NMOS transistors and the second PMOS transistor.
7. The circuit of claim 2 further comprising a circuit to be biased that produces a reference voltage on a gate node of the second PMOS transistor, and receives a bias voltage from the source node of the second PMOS transistor.
8. The circuit of claim 7 wherein the circuit to be biased comprises a mixer circuit.
9. The circuit of claim 8 further comprising a low pass filter coupled between the mixer circuit and the gate node of the second PMOS transistor.
10. The circuit of claim 2 wherein the first and second PMOS transistors are substantially matched to have similar Vsg.
11. The circuit of claim 2 wherein the first and second PMOS transistors have dissimilar width-to-length ratios (W/L) to produce dissimilar Vsg.
12. A method comprising:
replicating a gate-to-source voltage of an NMOS transistor across a source-to-gate junction of a PMOS transistor to provide a bias voltage for a second NMOS transistor, wherein replicating comprises drawing a current through the NMOS transistor, and imposing the Vgs of the NMOS transistor across the source-to-gate junction of the PMOS transistor; and
providing current from the PMOS transistor to a source node of a second PMOS transistor to replicate the Vgs of the NMOS transistor as a Vsg of the second PMOS transistor.
13. The method of 12 wherein the PMOS transistor and second PMOS transistor have dissimilar width-to-length ratios (W/L), and replicating the Vgs of the NMOS transistor comprises creating a Vsg that is a multiple of the Vgs of the NMOS transistor.
14. A system comprising:
an antenna; and
a mixer circuit coupled to receive a signal from the antenna, the mixer circuit having a first NMOS transistor having a gate node and drain node coupled to a power supply node, a current source coupled to a source node of the first NMOS transistor to provide a drain-to-source current (Ids) through the first NMOS transistor, and to produce a first gate-to-source voltage (Vgs) between the gate node and source node of the first NMOS transistor, and a plurality of stacked PMOS transistors coupled such that a source-to-gate voltage (Vsg) of at least one of the plurality of stacked PMOS transistors matches the Vgs of the first NMOS transistor.
15. The system of claim 14 wherein the plurality of stacked PMOS transistors comprises:
a first PMOS transistor having a source node coupled to the gate node of the first NMOS transistor, and a gate node coupled to the source node of the first NMOS transistor; and
a second PMOS transistor having a source node coupled to the drain node of the first PMOS transistor, and a source node coupled to a reference node.
16. The system of claim 15 wherein the mixer circuit further comprises a plurality of NMOS transistors biased by a Vsg of the second PMOS transistor.
17. The system of claim 16 further comprising at least one low pass filter coupled between the plurality of NMOS transistors and the second PMOS transistor.
18. The system of claim 15 wherein the first and second PMOS transistors are substantially matched to have similar Vsg.