Granted Patent B2

US 7,439,175 · App. 11/645,533 · Granted Oct 21, 2008

Abstract

Claims (12)

1. A method for forming a thin film of a semiconductor device, comprising:

forming a TaN film on a substrate; and

converting a portion of the TaN film into a Ta film by reacting the TaN film with NO 2 , wherein the Ta film is formed to have a thickness which is about half of the thickness of the TaN film.

2. The method of claim 1 , wherein the TaN film is formed by using a physical vapor deposition process.

3. A method for forming a metal line of a semiconductor device, comprising:

forming an interlayer insulating film on a semiconductor substrate;

forming a trench on the interlayer insulating film through a selective etching process exposing the substrate through the trench;

forming a TaN film on an entire surface of the resultant structure after forming the trench;

converting a portion of the TaN film into a Ta film by reacting the TaN film with NO 2 ; and

forming a metal line on the Ta film, wherein the Ta film is formed to have a thickness which is about half of the thickness of the TaN film.

4. The method of claim 3 , wherein the TaN film is formed by using a physical vapor deposition process.

5. The method of claim 3 , wherein the metal line is formed of Cu.

Assignments (6)