Semiconductor device and manufacturing method therof
The semiconductor device manufacturing method includes the steps of: applying a first wire including a barrier metal film, a seed film, and a wiring material film in a first wire trench formed in a first interlayer dielectric film; after a second interlayer dielectric film is formed on the first interlayer dielectric film, forming a via hole and a second wire trench in the second interlayer dielectric film so as to expose the wiring material film; applying a barrier metal film on the semiconductor device; and after the barrier metal film on the wiring material film is removed by using, for example, a re-sputtering process, applying a barrier metal film on the wiring material film. The re-sputtering process can remove an oxide film of impurity metal in the seed film applied on the wiring material film.
1 . A semiconductor device comprising:
a first interlayer dielectric film on a substrate,
a first wire in the first interlayer dielectric film, the first wire including a first wiring material film which contains at least one element of metal,
a second interlayer dielectric film on the first interlayer dielectric film and the first wire, the second interlayer dielectric film having a trench in which the first wiring material film is exposed,
an oxide film of the metal between an upper end surface of the first wiring material film and the second interlayer dielectric film, and
a second wire including a barrier metal film and a second wiring material film in the trench.
2 . A semiconductor device of claim 1 , wherein the trench is formed by a via hole reaching the first wiring material film and a wire trench reaching the via hole.
3 . A semiconductor device of claim 1 , wherein
an upper part of the first wiring material film has a concavity,
the concavity is covered by the barrier metal film, and
the second wiring material film is also provided in the concavity.
4 . A semiconductor device of claim 1 , wherein an upper surface of the first wiring material film is flat.
5 . A semiconductor device of claim 1 , further comprising:
a liner dielectric film between the first interlayer dielectric film and the second interlayer dielectric film, the liner dielectric film having an opening in a region on the first wiring material film, wherein
the oxide film of the metal is formed between an upper surface of the first wire including the first wiring material film and a lower surface of the liner dielectric film,
the opening is covered by the barrier metal film, and
the second wiring material film is also provided in the opening.
6 . A semiconductor device of claim 1 , wherein
the first wiring material film and the second wiring material film are of copper, and
the metal has binding energy with oxygen higher than the first wiring material film and the second wiring material film.
7 . A semiconductor device of claim 6 , wherein the metal contains at least one element selected from the group consisting of Al, Mg, Zn, Fe, Sn, and Ti.
8 . A semiconductor device manufacturing method comprising the steps of:
(a) forming a first wiring material film in a first interlayer dielectric film formed on a substrate,
(b) forming a second interlayer dielectric film on the first wiring material film and on the first interlayer dielectric film,
(c) forming a trench in the second interlayer dielectric film to expose the first wiring material film,
(d) forming a barrier metal film in the trench,
(e) forming a concavity in an upper part of the first wiring material film by removing a part of the barrier metal film over the first wiring material film and a part of the first wiring material, and
(f) forming a second wiring material film to fill the trench and the concavity, wherein
the first wiring material film contains at least one element of metal,
an oxide film of the metal is formed on an upper surface of the first wiring material film in steps (a) and (c), and
step (e) includes removing an exposed part of the oxide film of the metal formed on the upper surface of the first wiring material film.
9 . A semiconductor device of claim 8 , wherein step (e) is performed by a re-sputtering process.
10 . A semiconductor device manufacturing method comprising the steps of:
(a) forming a first wiring material film in a first interlayer dielectric film formed on a substrate,
(b) forming a second interlayer dielectric film on the first wiring material film and the first interlayer dielectric film,
(c) forming a trench in the second interlayer dielectric film to expose the first wiring material film,
(d) performing a hydrogen plasma process on the first wiring material film,
(e) after step (d), forming a barrier metal film in the trench, and
(f) after step (e), forming a second wiring material film to fill the trench, wherein
the first wiring material film contains at least one element of metal,
an oxide film of the metal is formed on an upper surface of the first wiring material film in steps (a) and (c), and
step (d) includes removing an exposed part of the oxide film of the metal formed on the upper surface of the first wiring material film.
11 . A semiconductor device manufacturing method of claim 8 , wherein step (c) includes the steps of:
(c1) forming a via hole reaching the first wiring material film, and
(c2) forming a wire trench reaching the via hole.
12 . A semiconductor device manufacturing method of claim 8 , further comprising the step of:
after step (a) and before step (b), forming a liner dielectric film on the first interlayer dielectric film, wherein
step (b) includes forming the second interlayer dielectric film on the liner dielectric film, and
step (c) includes forming an opening in a part of the liner dielectric film on the first wiring material film.
13 . A semiconductor device manufacturing method of claim 8 , wherein
the first wiring material film and the second wiring material film are of copper, and
the metal has binding energy with oxygen higher than the first wiring material film and the second wiring material film.
14 . A semiconductor device manufacturing method of claim 13 , wherein the metal contains at least one element selected from the group consisting of Al, Mg, Zn, Fe, Sn, and Ti.