Method and apparatus for extending equipment uptime in ion implantation
View Patent ↗The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.
1. A reactive gas cleaning system for cleaning an ion source having an ion source and an extraction electrode, said reactive gas cleaning system comprising:
a plasma chamber arranged to receive a feed gas capable of being disassociated by plasma to produce a flow of reactive gas;
a chamber outlet formed on said plasma chamber; and
a conduit for transporting the reactive gas to the ionization chamber, wherein said reactive gas cleaning system is operable when the ionization chamber is dc-energized to provide a flow of reactive gas through the ionization chamber and through the ion extraction aperture to react with and remove deposits on at least some of the surfaces thereof.
2. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas cleaning system is constructed to produce a flow of the reactive gas into the ionization chamber at a flow rate of less than about 2 Standard Liters Per Minute.
3. The reactive gas cleaning system as recited in claim 1 , wherein said the plasma chamber is constructed and arranged to receive and disassociate a compound capable of being disassociated to atomic fluorine.
4. The reactive gas cleaning system as recited in claim 3 , wherein said compound is selected from the group consisting of(NF3, C3F8 and CF4).
5. The reactive gas cleaning system as recited in claim 1 , further including an end-point detection system which detects substantial completion of reaction of the reactive gas with contamination on a surfaces being cleaned.
6. The reactive gas cleaning system as recited in claim 5 , said end point detection system includes an analysis system for detecting the chemical makeup of the gas that has been exposed to the surface to be cleaned.
7. The reactive gas cleaning system as recited in claim 6 , further including a temperature detector arranged to detect substantial termination of an exothermic reaction of the reactive gas with contamination on a surface of the system.
8. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas is a halogen gas.
9. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas cleaning system generates fluorine, F, ions to the ionization chamber for cleaning deposits from the surfaces to be cleaned.
10. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas cleaning system generates chlorine Cl, ions to the ionization chamber for cleaning deposits from the surfaces to be cleaned.
11. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas cleaning system is configured to remove deposits after the ion source has ionized decaborane, B10H14.
12. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas cleaning system is configured to remove deposits after the ion source has ionized octadecaborane, B18H22.
13. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas cleaning system is configured to remove deposits after the ion source has ionized arsenic-containing compounds, such as arsine, AsH3.
14. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas cleaning system is configured to remove deposits after the ion source has ionized arsenic-containing compounds, such as elemental arsenic, As.
15. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas cleaning system is configured to remove deposits after the ion source has ionized phosphorus-containing compounds, such as elemental phosphorus, P.
16. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas cleaning system is configured to remove deposits after the ion source has ionized phosphorus-containing compounds, such as or phosphine, PH3.
17. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas cleaning system is configured to remove deposits after the ion source has ionized antimony-containing compounds, such as trimethylantimony, Sb (CH4) 3.
18. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas cleaning system is configured to remove deposits after the ion source has ionized antimony-containing compounds, such as antimony pentaflouride, SbFs.
19. The reactive gas cleaning system as recited in claim 1 , wherein said reactive gas is a fluorine gas.
20. The reactive gas cleaning system as recited in claim 19 , wherein said fluorine gas is produced in the plasma chamber by a NF3 plasma.
21. The reactive gas cleaning system as recited in claim 19 , wherein said fluorine gas is produced in the plasma chamber by a C3F8 plasma.
22. The reactive gas cleaning system as recited in claim 19 . wherein said fluorine gas is produced in the plasma chamber by a CF4 plasma.