IP Library Granted Patent US 8,604,605
Granted Patent B2
US 8,604,605 · App. 11/650,356 · Granted Dec 10, 2013

Microelectronic assembly with multi-layer support structure

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Quick Facts
Patent No.
US 8,604,605
App. No.
11/650,356
Granted
Dec 10, 2013
Kind
B2
Abstract

A method of forming a microelectronic assembly includes positioning a support structure adjacent to an active region of a device but not extending onto the active region. The support structure has planar sections. Each planar section has a substantially uniform composition. The composition of at least one of the planar sections differs from the composition of at least one of the other planar sections. A lid is positioned in contact with the support structure and extends over the active region. The support structure is bonded to the device and to the lid.

Claims (44)

1. A microelectronic assembly comprising:

a device wafer portion having a surface that includes an active region;

a support structure disposed on the surface of the device wafer portion and located adjacent to, but not extending onto, the active region; and

a lid in contact with the support structure and extending over the active region,

wherein the support structure is formed of a plurality of planar sheets, each planar sheet having a substantially uniform composition,

the plurality of planar sheets comprises:

first and second adhesive layers coupled to the device wafer portion and to the lid, respectively, and

the composition of the first adhesive layer differs from the composition of the second adhesive layer.

2. The microelectronic assembly of claim 1 , wherein the plurality of planar sheets comprises: a structural layer between the first and second adhesive layers, wherein the structural layer is resistive to deformation under environmental conditions that are suitable to bond the first adhesive layer to the device wafer portion and the second adhesive layer to the lid.

3. The microelectronic assembly of claim 2 , wherein the environmental conditions comprise a pressure and a temperature suitable to bond the first adhesive layer to the device wafer portion and the second adhesive layer to the lid.

4. The microelectronic assembly of claim 2 , wherein the first and second adhesive layers are specifically formulated to facilitate bonding to the device wafer portion and to the lid, respectively.

5. The microelectronic assembly of claim 2 wherein the structural layer is substantially opaque.

6. The microelectronic assembly of claim 1 , wherein the plurality of planar sheets comprises:

first and second structural layers respectively coupled to the device wafer portion and to the lid;

an adhesive layer positioned between the first and second structural layers,

wherein the first and second structural layers are adapted to resist deformation under environmental conditions that are suitable for bonding the adhesive layer to the first and second structural layers.

7. The microelectronic assembly of claim 1 wherein the active region is populated with one or more microelectronic devices.

8. The microelectronic assembly of claim 7 wherein the one or more microelectronic devices comprise one or more optical devices, and wherein the lid is substantially transparent to electromagnetic radiation at a wavelength that is relevant to the one or more optical devices.

9. The microelectronic assembly of claim 8 wherein the lid is glass.

10. The microelectronic assembly of claim 8 wherein at least one of the planar sections is substantially opaque at a wavelength that is relevant to the one or more optical devices.

11. The microelectronic assembly of claim 1 , wherein the active region of the device wafer portion, a portion of the lid extending over the active region, and a border of the support structure that adjoins the active region together define a substantially empty cavity.

12. The microelectronic assembly of claim 1 , wherein the support structure extends onto one or more dicing lanes of the device wafer portion.

13. A microelectronic assembly, comprising:

a device wafer having a surface that includes one or more active regions;

a support structure disposed on the surface of the device wafer and located adjacent to each of the one or more active regions but not extending onto any of the active regions; and

a lid wafer in contact with the support structure and extending over each of the one or more active regions,

wherein the support structure is formed of a plurality of planar sheets, each planar sheet having a substantially uniform composition,

the plurality of planar sheets comprises:

first and second adhesive layers coupled to the device wafer and to the lid wafer, respectively, and

the composition of the first adhesive layer differs from the composition of the second adhesive layer.

14. The microelectronic assembly of claim 13 , wherein the plurality of planar sheets comprises: a structural layer between the first and second adhesive layers, wherein the structural layer is resistive to deformation under environmental conditions that are suitable to bond the first adhesive layer to the device wafer and the second adhesive layer to the lid wafer.

15. The microelectronic assembly of claim 14 , wherein the environmental conditions comprise a pressure and a temperature suitable to bond the first adhesive layer to the device wafer and the second adhesive layer to the lid.

16. The microelectronic assembly of claim 14 , wherein the first and second adhesive layers are specifically formulated to facilitate bonding to the device wafer and to the lid wafer, respectively.

17. The microelectronic assembly of claim 14 , wherein the structural layer is substantially opaque.

18. The microelectronic assembly of claim 13 , wherein each of the one or more active regions is populated with one or more associated microelectronic devices.

19. The microelectronic assembly of claim 18 , wherein the one or more microelectronic devices associated with each of the one or more active regions comprise one or more optical devices, and the lid wafer is substantially transparent to electromagnetic radiation at a wavelength that is relevant to the one or more optical devices.

20. The microelectronic assembly of claim 19 , wherein the lid wafer is glass.

21. The microelectronic assembly of claim 19 , wherein at least one of the plurality of planar sheets is substantially opaque at a wavelength that is relevant to the one or more optical devices.

22. The microelectronic assembly of claim 13 , wherein each of the one or more active regions of the device wafer, a portion of the lid extending over that active region, and a border of the support structure that adjoins that active region together define an associated substantially empty cavity.

23. The microelectronic assembly of claim 13 , wherein the support structure extends onto one or more dicing lanes of the device wafer.

24. The microelectronic assembly of claim 2 , wherein the first adhesive layer is of a material formulated to facilitate bonding to the device wafer portion.

25. The microelectronic assembly of claim 2 , wherein the second adhesive layer is of a material formulated to facilitate bonding to the lid.

26. The microelectronic assembly of claim 13 , wherein the first adhesive layer is of a material formulated to facilitate bonding to the device wafer.

27. The microelectronic assembly of claim 13 , wherein the second adhesive layer is of a material formulated to facilitate bonding to the lid wafer.

Assignments (6)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073508/0758 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0807 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
CHANGE OF NAME Recorded May 4, 2012
From: TESSERA TECHNOLOGIES IRELAND LIMITED
To: DIGITALOPTICS CORPORATION EUROPE LIMITED
Reel/Frame 028170/0196 →